2011
DOI: 10.1007/s00339-011-6383-3
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Gas-phase preparation and size control of Fe nanoparticles

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Cited by 8 publications
(4 citation statements)
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“…The experimental apparatus of plasma-gas-condensation (PGC)-type cluster deposition system was employed to prepare the samples. The apparatus was simply divided into three regions: a sputtering chamber, a cluster growth room and a deposition chamber 39 . The nucleation and growth of Co clusters occurred mainly in the sputtering chamber.…”
Section: Methodsmentioning
confidence: 99%
“…The experimental apparatus of plasma-gas-condensation (PGC)-type cluster deposition system was employed to prepare the samples. The apparatus was simply divided into three regions: a sputtering chamber, a cluster growth room and a deposition chamber 39 . The nucleation and growth of Co clusters occurred mainly in the sputtering chamber.…”
Section: Methodsmentioning
confidence: 99%
“…2d indicated that the typical diffraction peaks located at 2θ values of 40.415 o , 46.788 o and 68.423 o were attributed to (111), (200) and (220) planes of fcc Pd, respectively. Moreover, with the T S increasing, the intensity and sharpness of each typical diffraction peak became stronger, which indicated that the crystallinity of Pd NCs was enhanced and the grain size grew up due to agglomeration [12,13]. Cyclic voltammetry of nanocluster-assembled Pd films prepared at different T S are exhibited in Fig.…”
Section: Fig 1 the Schematic Diagram Of Pd Nanoclusters Deposition mentioning
confidence: 94%
“…In our previous paper, the process for the preparation of cluster-assembled films was precisely delineated (the schematic diagram is shown in Fig. 1) [12]. During deposition, a high-purity Pd (99.99 %) metal target was used as the cluster source.…”
Section: Methodsmentioning
confidence: 99%
“…A PGCCD system (Fig. 1) was used to synthesize Pd and PdCo NCs, and the experiment principle has been described in detail in our earlier work [11] . High-purity Pd and Co (99.99%) metal targets were installed as 100 mm apart distance, and an Ar flow rate of 350 sccm adjusted by a fine mass flow controller was injected steadily into the Sputtering chamber.…”
Section: Methodsmentioning
confidence: 99%