Gas phase pulse etching of silicon for MEMS with xenon difluoride

Chan, Isaac; Brown, K.B.; Lawson, R. P. W.; Robinson, A. M.; Ma, Yuan; Strembicke, D.

doi:10.1109/ccece.1999.804962

Cited by 24 publications

(11 citation statements)

References 8 publications

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“…The a-Si layer is etched using XeF2 vapour, this step uses the thermal oxide layer to act as a stopping material for the gas phase etchant. The XeF2 has near infinite etch selectivity between Si and other materials like photoresist, SiO2 and Al [23]. It has been seen that as little as 3nm of silicon dioxide is enough to prohibit etching through to the silicon.…”

Section: Fabricationmentioning

confidence: 99%

Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

Boodhoo

Crudgington

Chong

et al. 2015

Microelectronic Engineering

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Suspended silicon nanowires with narrow (~10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermallyoxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 10 5 and a threshold voltage of-1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

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Section: Fabricationmentioning

confidence: 99%

Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

Boodhoo

Crudgington

Chong

et al. 2015

Microelectronic Engineering

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“…This will thus offer a very simple and cost effective solution while maintaining the CMOS compatibility. In addition to

normalSi F_{4}

, etch products have also been reported to include some trace amount of other different silicon fluoride by‐products, which make the reaction kinetics quite puzzling and not fully understandable [18, 19]. This motivated different researchers to study and analyse the reaction kinetics and mechanisms [20–22].…”

Section: Introductionmentioning

confidence: 99%

“…Some efforts have also been placed into modelling and simulating this process [26]. However, this process generally shows a non‐linear etching behaviour and is dramatically dependent on the loaded sample conditions as well as the masking pattern [18, 19, 24]. This explains the huge variation of the reported numerical values of the etching results.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of microparabolic reflector for infrared antenna coupled detectors

Mubarak

Sidek

Abdel‐Rahman

et al. 2018

Micro & Nano Letters

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The fabrication process of a microparabolic reflector using isotropic xenon difluoride XeF 2 etching technique is presented and analysed through this work for developing infrared antenna-coupled detectors. Although many parametric studies described the behaviour of this process in the literature, the non-linearity of the process and its dramatic dependency on the pattern definition result in great difficulties when adopting the process for developing a particular structure. The main focus of this work is, therefore, to present a detailed etching analysis as dictated in the proposed design providing the proper etching recipe according to the proposed structure design and its associated masking pattern. Deep insights into the process have been highlighted suggesting the necessity of the process assessment in terms of evaluating the threedimensional etched volume rather than the etched depth. This will potentially solve the non-linearity behaviour and the pattern dependency problem. The optimum etching recipe yields approximately a total volume of 0.354 mm 3 through the proper patterning mask. The resultant parabolic cavities have 75 and 13 mm in their diameter and depth, respectively, as required for the proposed structure. The integration of a microparabolic reflector with such detectors will potentially enhance the specific detectivity of these detectors.

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“…XeF 2 offers very high selectivity during etching. Etch rates for metals, photoresists and SiO 2 are typically more than 100 times slower than that of Si [5,[8][9][10][11]. Because XeF 2 etches at room temperature with such high selectivity it is an ideal etchant when damage to features is a concern.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Temperature on the Etch Rate and Roughness of Surfaces Etched With XEF2

Butner

Leseman

2010

Volume 10: Micro and Nano Systems

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In this work we present results from a pulsed etching system with XeF 2 for an expanded temperature range while at the same time determining the roughness of the substrate left behind. The experimental apparatus used for the work presented in this paper is capable of temperature ranges from approximately 100 to 800 K. Data was taken at a constant etching pressure of 1.2 Torr so the effect of temperature on roughness and etch rate could be studied. Etch rates and surface roughnesses were characterized using a vertical scanning and phase shifting interferometer, respectively.

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Gas phase pulse etching of silicon for MEMS with xenon difluoride

Cited by 24 publications

References 8 publications

Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

Fabrication of microparabolic reflector for infrared antenna coupled detectors

The Effect of Temperature on the Etch Rate and Roughness of Surfaces Etched With XEF2

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