“…Over the past decades, tin dioxide (SnO 2 ), an n-type semiconductor, has been the most investigated material for gas detection owing to its high sensitivity, rapid response time, low cost, and high chemical stability. [52,76,78,79,94,[113][114][115] As regards tin dioxide use for CWA simulant sensing, efforts have been initially devoted to thick films [5,27,47,52,64,76,78,79,83] and, subsequently, to 1D SnO 2 nanostructures, such as nanobelts, nanowires, and nanorods, [28][29][30]56,90,116] promising building blocks to develop a new generation of metal oxide gas sensors. As concerns the former, various literature works have reported on SnO 2 -based thick film, eventually mixed with Al 2 O 3 , In 2 O 3 , ZnO, ZrO 2 , Nb 2 O 5 , Pd, Pt, [27,47,78,117,118] Co 3 O 4 , Nb 2 O 5 , MoO 3 , NiO, Sb 2 O 3 , [52] or MoO 3 , Sb 2 O 3 , and NiO.…”