GaSb/Mn multilayers structures fabricated by DC magnetron sputtering: Interface feature and nano-scale surface topography

Calderón, Jorge A.; Quiroz, Heiddy P.; Manso‐Silván, Miguel; Noval, Álvaro Muñoz; Dussán, A.; Méndez, H.

doi:10.1007/s10854-022-07965-9

Cited by 2 publications

(1 citation statement)

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“…The reports from previous studies have demonstrated the formation of the multilayer systems with the formation of the interlayers due to the diffusion process between the GaSb and Mn layer, and the formation of p-type GaSb when the samples were deposited via DC magnetron sputtering 26 . However, the study of these nanostructures for applications such as random access memories based on the electrical and magnetic properties of the multilayers is still under study.…”

Section: Introductionmentioning

confidence: 95%

Exchange bias coupling and bipolar resistive switching at room temperature on GaSb/Mn multilayers for resistive memories applications

Calderón

Quiroz

Terán

et al. 2023

Sci Rep

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This work present structural, morphological, magnetic, and electrical properties of GaSb/Mn multilayer deposited via DC magnetron sputtering at room temperature and at 423 K. The samples are characterized by forming layers of 3, 6 and 12 periods of the GaSb/Mn structure. Through XRD patterns, it was possible to stablish the formation of GaSb, Mn3Ga, and Mn2Sb2 phases. FTIR measurements present an optical interference associated with periodicity and the homogenous thickness of the layers. HR-SEM shows the multilayer architecture with columnar microstructure in the formation of layers with grain nucleation on the surface. A ferromagnetic-like behavior was observed in the multilayers at room temperature related to the domains and interlayers interaction. Additionally, the hysteresis curves present shifts attributed to the effect of exchange bias coupling. I-V curves show RESET-SET states of the multilayer system with bipolar resistive behavior, which can be modified by external magnetic fields. The resistive switching evidenced corresponds to the conductive mechanism based on the capacitive conductance and the formation of conductive filaments in multilayer structure.

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Section: Introductionmentioning

confidence: 95%