2023
DOI: 10.1088/1361-6463/acb55e
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Gate-controlled hysteresis curves and dual-channel conductivity in an undoped Si/SiGe 2DEG structure

Abstract: Exploring the cryogenic transport properties of two-dimensional electron gas in semiconductor heterostructures is always a focus of fundamental research on Si-based gate-controlled quantum devices. In this work, based on the electrical and magnetic transport characteristics of Si/SiGe heterostructure Hall-bar shaped field effect transistors (FETs) at 10 K and 1.6 K, we study the effects of electron tunneling that occurs in the heterostructure and populates the oxide/semiconductor interface on its transport pro… Show more

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