Gate-controlled reversible rectifying behavior investigated in a two-dimensional MoS2 diode

Two-dimensional HfS2–ZrS2 lateral heterojunction FETs with high rectification and photocurrent

“…In Fig. 2(b), the monolayer HfS 2 –ZrS 2 lateral heterojunction diode presented a high rectifying ratio of 9 × 10 12 , which is larger than that of 2D material-based diodes (10 6 for MoSi 2 P 4 p – n junction, 38 10 7 for 1T–2H MoS 2 , 56 and 10 5 for AsP 57 ).…”

First-Principles Study of Gate-Tunable Reversible Rectifying Behavior in 2D WGe2N4–TaSi2N4 Heterojunction Diodes: Implications for Logic Devices

“…To verify our thoughts, we present a systematic study of the interfacial properties and the rectifying behaviors of the in-plane (IP) and out-of-plane (OP) heterojunction WGe 2 N 4 –TaSi 2 N 4 diodes by using density functional theory combined with nonequilibrium Green’s function approach. As the gate voltage is reported to be an efficient way to control the rectifying behaviors, ,, we utilize double gates to the IP and OP WGe 2 N 4 –TaSi 2 N 4 diodes to explore the effect of gate voltage on their rectifying behaviors. The rectification mechanism of the diodes is further elucidated by ransmission spectra and the local device density of states.…”

“…Since the discovery of graphene in 2004, a variety of two-dimensional (2D) materials have been experimentally synthesized or theoretically predicted, such as transition metal sulfides, − phosphorene, − and MXenes. , Due to the dangling-bond-free surfaces and atomic thickness, − the 2D materials and their heterojunctions are widely used to design and fabricate multitudinous devices, ,, including diodes, ,− gas sensors, field-effect transistors, ,, etc. Among them, as the diodes are one of the most commonly used electronic components, they have been extensively studied based on both lateral and vertical heterojunctions. ,,, Since the lateral heterojunction diodes are obtained by seamlessly stitching the edges of two different 2D materials in the same plane via chemical bonding, the lattice-constant matching between these two panels is an essential parameter in determining the performance of the diodes, due to its influence on the interfacial properties and the efficiency of carrier injection. − Differently, the vertical heterojunctions are composed of 2D materials by van der Waals interaction, avoiding the misfit dislocations at the interfaces, and thus the requirement of lattice-constant matching is relaxed in the fabrication of vertical heterostructure diodes . However, their stacking orientation is a key issue restricting the performance of vertical heterojunction–based diodes .…”

Schottky diodes based on blue phosphorene nanoribbon homojunctions

“…In recent years, two-dimensional (2D) nanomaterials, represented by graphene, have attracted extensive research interest due to their novel physical and chemical properties. 2D materials have a wide range of applications, such as in spintronic devices, 1–6 rectifier diodes, 7–12 solar cells, 13 gas sensors, 14–16 field-effect transistors, 17–19 etc. 20–22 Rectifier diodes, as common electronic components, are widely used in various circuits.…”