Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

Abstract

We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm(2)/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (α) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the α value increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations indicate that the main causes of the large improvement in α are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented in this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.

Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization

“…They either did not vary carrier density [22] or did so by illumination with a light-emitting diode, rather than applying a gate voltage [23]. Experiments with gate voltages either reported no gate dependence [24] or a negative dependence for top-gate voltages [26] by the QW potential gradient in accordance with theoretical predictions [21,28,40]. So, the negative dependence we report here could be caused by DP with Rashba SOI or EY.…”

“…We note that there is a variation in the reported accompanying effective [24] 317 0.040 Grundler [26] 47 0.036 Schierholz et al [27] 167 0.026 Kim et al (2014) [28] 221 0.050 [21] 237 Park et al [39] 473 InAs/GaSb (this work) 150 InAs (this work) 380 mass m * . The results are presented in Table I and show that SOI length due to the EY mechanism that we measure here is in the range of the reported Rashba SOI lengths and cannot be neglected in a thorough investigation of spin-relaxation mechanisms.…”

“…The Rashba spin-orbit interaction (SOI) has been studied in 2DEGs in several InAs and InGaAs quantum-well (QW) heterostructures [21][22][23][24][25][26][27][28]. The SOI gives rise to the conventional spin-Hall effect (SHE), which is useful as a means of manipulating spin in a spintronic device, while its inverse can be used for detecting spin-polarized currents such as those in the helical edge states generated by the QSHE.…”

Rashba and Dresselhaus Effects in Hybrid Organic–Inorganic Perovskites: From Basics to Devices

“…Contrary to the previous examples, 38,39,[73][74][75][76][77][78][79] the suggested setup presents no manifestation of the SOC in terms of spin 19 splitting (l R = 0 eV.Å) when the electric field is switched off, which makes less delicate the tuning of the source-drain distance and of the amplitude of the transverse field.…”

“…After the very first observations of tunable Rashba splitting, [21][22][23] several examples of devices have been produced 38,39,73,74 or proposed on the basis of theoretical inspections. 75,76 More elaborated devices have been proposed based on the same principle, adding a transverse magnetic field to the electric one and using more than one site for SOC effect.…”