Gate-Defined Quantum Dots in Intrinsic Silicon

Angus, S. J.; Ferguson, A. J.; Dzurak, A. S.; Clark, Robert G.

doi:10.1021/nl070949k

Cited by 245 publications

(277 citation statements)

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“…electron transistor (SET) [16]. Spin control was achieved through microwave and RF excitations generated by an arXiv:1408.1347v1 [cond-mat.mes-hall] 6 Aug 2014 on-chip broadband transmission line [17].…”

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Coherent Control of a SingleSi29Nuclear Spin Qubit

et al. 2014

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Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single 29 Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of T2 = 6.3(7) ms -in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the 29 Si atom under investigation. These results demonstrate that single 29 Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer.The presence of non-zero nuclear spins in a host crystal lattice is known to induce decoherence in a central spin qubit through mechanisms such as spectral diffusion [1]. This "nuclear bath" is the primary source of decoherence for 31 P electron and nuclear spin qubits in silicon [2,3], nitrogen-vacancy (NV) centers in diamond [4], as well as for GaAs-based quantum dot spin qubits [5,6]. However, for semiconductors composed of majority spin-zero isotopes (such as silicon and carbon), the low abundance of spin-carrying nuclei allows to resolve the hyperfine couplings of individual nuclei with a central electronic spin, permitting the detection and manipulation of single nuclear spins. This has led to the demonstration of a quantum register for the spin of a NV center in diamond, where the electronic spin state can be stored in individual nuclei [7] and read out in single shot [8]. Quantum error correction protocols have been implemented within these nuclear spin registers [9,10], showing their potential to implement surface-code based quantum computing architectures [11]. Natural silicon contains a 4.7% abundance of the spin-carrying (I = 1/2) 29 Si isotope which, in combination with a localized electron spin, could in principle be used as quantum register or ancilla qubit equivalently to 13 C in NV-diamond. In addition, the 29 Si nuclear spin has itself been championed as a quantum bit in an "allsilicon" quantum computer [12,13].Here we present the first experimental demonstration of single-shot readout, coherent control, and measurement of the coherence properties of an individual 29 Si nuclear spin in natural Si. All measurements were performed with a magnetic field B 0 = 1.77 T, in a dilution refrigerator with electron temperature T el ≈ 250 mK. This work follows from previous experiments where the electron [2] and nuclear [3] spins of a single 31 P donor were detected using a compact nanoscale device [14] consisting of ion-implanted phosphorus donors [15], tunnel-coupled to a silicon MOS single- electron transistor (SET) [16]. Spin control was achieved through microwave and RF excitations generated by an arXiv:1408.1347v1 [cond-mat.mes-hall]

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Coherent Control of a SingleSi29Nuclear Spin Qubit

et al. 2014

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“…These low current signals, of the order of 1 pA, are sensitive to thermal fluctuations and hence are not satisfactory for the planned quantum metrological triangle experiments [3]. Other single-electron pumping experiments have been carried out in different systems such as hybrid normal-metal-superconductor turnstiles [5], GaAs/AlGaAs nanowire quantum dots [6], InAs nanowire double quantum dots [7], metal-oxidesemiconductor field-effect transistors (MOSFETs) in Si nanowires [8], and GaAs quantum dots [9].In this paper, we employ a silicon quantum dot [10] shown in Fig. 1(a,b) as a test-bed for the current source.…”

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“…In this paper, we employ a silicon quantum dot [10] shown in Fig. 1(a,b) as a test-bed for the current source.…”

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“…The source and drain were thermally diffused with phosphorus and a high-quality gate oxide was grown thermally yielding a low Si/SiO 2 interface trap density of * Electronic mail: kokwai@unsw.edu.au 2×10 10 cm −2 eV −1 [12]. Two 30 nm wide Al barrier gates with 90 nm separation, defined with electron beam lithography, were subsequently oxidised on a hotplate at 150 • C for 5 minutes to form a thin 3-5 nm Al x O y layer [10]. This layer provides insulation from the overlying top gate which was defined subsequently.…”

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Single-electron shuttle based on a silicon quantum dot

Chan

Möttönen

Kemppinen

et al. 2011

Applied Physics Letters

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We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.Keywords: quantum dot, silicon, single-electron, charge pumping While the Josephson voltage and the quantum-Hall resistance standards [1,2] are routinely used in metrology institutes worldwide, the current standard is missing from the so-called quantum metrological triangle which would provide a consistency check for these three quantities. The consistency would remove any remaining doubts about the quantum standards and justify a redefinition of the International System of Units [3].A metallic electron pump with a relative uncertainty of a few parts in 10 8 in its current has been achieved by utilizing seven tunnel junctions in series, forming six gated islands [4]. However, the operation frequency was limited to the megahertz range because of adiabaticity requirements for the high number of islands. These low current signals, of the order of 1 pA, are sensitive to thermal fluctuations and hence are not satisfactory for the planned quantum metrological triangle experiments [3]. Other single-electron pumping experiments have been carried out in different systems such as hybrid normal-metal-superconductor turnstiles [5], GaAs/AlGaAs nanowire quantum dots [6], InAs nanowire double quantum dots [7], metal-oxidesemiconductor field-effect transistors (MOSFETs) in Si nanowires [8], and GaAs quantum dots [9].In this paper, we employ a silicon quantum dot [10] shown in Fig. 1(a,b) as a test-bed for the current source. The device was fabricated on a high-resistivity (ρ > 10 kΩ cm at 300 K) silicon substrate. An industry-compatible MOSFET fabrication process is adapted to realize our quantum dot system [11]. The source and drain were thermally diffused with phosphorus and a high-quality gate oxide was grown thermally yielding a low Si/SiO 2 interface trap density of * Electronic

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“…Electron spins bound to silicon QDs are seen as promising candidates for this due to their long coherence time, electrical tunability and flexible coupling geometries [3][4][5]. A further advantage of using Si is the possibility to integrate with current complementary-metaloxide-semiconductor (CMOS) technology [5][6][7][8] and leverage its established industrial platform for large scale circuits. Recently, the integration of Si quantum dots and double quantum dots (DQD) into CMOS technology has been taken a step further with reports of fewelectron QDs, DQDs, and donor-QD hybrids created within industry-standard Si nanowire transistors [9][10][11][12].…”

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Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Betz

Tagliaferri

Vinet

et al. 2016

Applied Physics Letters

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We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.Semiconductor quantum bits relying on the charge or spin degree of freedom of a single electron, bound to a quantum dot (QD) or impurity atom, are considered promising candidates for the base elements of solid state quantum computing architectures [1]. Building a successful quantum computer, however, requires a scalable multi-qubit approach to implement the necessary algorithms [2]. Electron spins bound to silicon QDs are seen as promising candidates for this due to their long coherence time, electrical tunability and flexible coupling geometries [3][4][5]. A further advantage of using Si is the possibility to integrate with current complementary-metaloxide-semiconductor (CMOS) technology [5-8] and leverage its established industrial platform for large scale circuits. Recently, the integration of Si quantum dots and double quantum dots (DQD) into CMOS technology has been taken a step further with reports of fewelectron QDs, DQDs, and donor-QD hybrids created within industry-standard Si nanowire transistors [9][10][11][12]. Combined with a gate-based readout scheme that alleviates the need for a separate charge sensor [10-14] these approaches pave the way towards a large scale quantum computing architecture based on current CMOS technology.In this Letter, we report on a reconfigurable QD and DQD system in a quadruple-gate CMOS transistor. It incorporates one, or a pair, of CMOS corner state quantum dots [10,11] in a variety of configurations. Each of the four gates can host an independently tunable quantum dot created in the square channel by electrostatic enhancement and confinement resulting from the topgate electrodes and accompanying silicon nitride spacers. We characterise one exemplary single QD and demonstrate that different DQD configurations can be set at will. Building on previous demonstrations [10][11][12] results provide a way to scale up CMOS quantum information architectures and to create reconfigurable silicon multi-dot arrangements. The device presented here is a fully depleted silicon-oninsulator (FDSOI) nanowire field-effect transistor with four independently addressable top-gates. The polyarXiv:1603.03636v1 [cond-mat.mes-hall]

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Gate-Defined Quantum Dots in Intrinsic Silicon

Cited by 245 publications

References 23 publications

Coherent Control of a SingleSi29Nuclear Spin Qubit

Coherent Control of a SingleSi29Nuclear Spin Qubit

Single-electron shuttle based on a silicon quantum dot

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

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