Gate Driver Design and Mitigation of Voltage Glitch in SiC MOSFET Using Miller Clamp

Abstract

This work provides a detailed discussion about power converter circuits using SiC MOSFET, a classical approach to designing gate drivers for SiC MOSFET, and mitigation of voltage glitch and crosstalk voltage in SiC MOSFET using active as well as passive miller clamp. Different type of gate driver configuration has been discussed in this work. Crosstalk voltage exits on the gate-source terminal of SiC power MOSFET. Active and passive miller clamps are used to eliminate any crosstalk voltage which is available in the switching the MOSFET. As a result of the rapid growth of semiconductor technology, a variety of high-performance semiconductor devices are becoming available for purchase. In recent years, the silicon carbide SiC MOSFET and the junction barrier Schottky diode (JBS) have been created and are now commercially accessible. SiC MOSFETs outperform their silicon counterparts in terms of performance. The voltage and current ratings of the SiC MOSFET have also been shown to be significantly higher than those of the Si MOSFET.