This work provides a detailed discussion about power converter circuits using SiC MOSFET, a classical approach to designing gate drivers for SiC MOSFET, and mitigation of voltage glitch and crosstalk voltage in SiC MOSFET using active as well as passive miller clamp. Different type of gate driver configuration has been discussed in this work. Crosstalk voltage exits on the gate-source terminal of SiC power MOSFET. Active and passive miller clamps are used to eliminate any crosstalk voltage which is available in the switching the MOSFET. As a result of the rapid growth of semiconductor technology, a variety of high-performance semiconductor devices are becoming available for purchase. In recent years, the silicon carbide SiC MOSFET and the junction barrier Schottky diode (JBS) have been created and are now commercially accessible. SiC MOSFETs outperform their silicon counterparts in terms of performance. The voltage and current ratings of the SiC MOSFET have also been shown to be significantly higher than those of the Si MOSFET.

This paper provides circuit analysis of low-side active-clamp forward converter with synchronous rectification which is widely used as an efficient power supply in various applications. With the use of active clamp technique and synchronous rectification techniques, the losses of the converter reduces and efficiency increases but the number of components also increases. A variety of soft-switching strategies are employed in the forward converter to reduce switching and conduction losses, as well as the overall efficiency. Different clamping circuits, including as active clamping and passive clamping circuits, have been used in the forward converter, which has resulted in a significant reduction in the losses of the converter. Additionally, interleaved and cascaded forward converters are employed in a variety of applications. A forward converter with several outputs is employed for a variety of applications.