Gate-Free InGaAs/InP Single-Photon Detector Working at Up to 100 Mcount/s

Tosi, Alberto; Scarcella, Carmelo; Boso, Gianluca; Acerbi, Fabio

doi:10.1109/jphot.2013.2278526

Cited by 18 publications

(18 citation statements)

References 19 publications

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“…5): as expected, afterpulsing is lower at higher temperature. By fitting the afterpulsing probability decay over the time delay after the original avalanche, we extracted three time constants (about 10, 20 and 320 μs at 225 K), which possibly Additionally, as demonstrated in literature [11], [17], [18], [19], when InGaAs/InP SPADs are employed with either GHz sinusoidal or sub-nanosecond gating, the avalanche charge is strongly reduced, thus afterpulsing lowers and a very high count rate can be reached.…”

Section: Afterpulsingmentioning

confidence: 69%

“…Detectors with DCR as low as few kilo-counts per seconds (cps) at 225 K (easy to reach by means of thermoelectric coolers) were demonstrated, with PDE higher than 20% at 1.55 μm [8], [9]. Others demonstrated low timing jitter, with lower than 100 ps full-width at half maximum (FWHM) and low afterpulsing probability, thus achieving 1 Mcps with standard square gate [10] and even 100 Mcps with GHz sinusoidal gating [11].…”

Section: Introductionmentioning

confidence: 99%

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Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

Tosi

Calandri

Sanzaro

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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104

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We present the performance of a novel InGaAs/InP single-photon avalanche diode (SPAD) with high detection efficiency and low noise thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. The 25-μ mactive-area diameter detector, operated in gated-mode with ON time of tens of nanoseconds, shows very low dark count rate (few kilo-counts per second at 225 K and 5 V of excess bias), 30% photon detection efficiency at 1550 nm, low afterpulsing, and a timing response with less than 90-ps full-width at half maximum and very fast exponential tail (time constant ∼ 60 ps). Therefore, this InGaAs/InP SPAD is among the best ones ever reported in the literature

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Section: Afterpulsingmentioning

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

Tosi

Calandri

Sanzaro

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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104

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“…After many periods, the SPAD samples uniformly the optical signal and the mean behavior is equivalent to the free-running mode, where the detector is always ON except for a hold-off time [10]. This approach makes it possible to have a free-running equivalent InGaAs/InP detector with very low afterpulsing probability (thanks to the extremely short ON time, few hundreds of picoseconds).…”

Section: High-frequency Balanced Detector Configurationmentioning

confidence: 99%

InGaAs/InP single-photon detector with low noise, low timing jitter and high count rate

et al. 2015

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We present a new InGaAs/InP Single-Photon Avalanche Diode (SPAD) with high detection efficiency and low noise, which has been employed in a sinusoidal-gated setup to achieve very low afterpulsing probability and high count rate.The new InGaAs/InP SPAD has lower noise compared to previous generations thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. A detector with 25 μm active-area diameter, operated in gated-mode with ON time of tens of nanoseconds, has a dark count rate of few kilo-counts per second at 225 K and 5 V of excess bias, 30% photon detection efficiency at 1550 nm and a timing jitter of less than 90 ps (FWHM) at 7 V of excess bias.In order to reduce significantly the afterpulsing probability, these detectors were operated with a sinusoidal gate at 1.3 GHz. The extremely short gate ON time (less than 200 ps) reduces the charge flowing through the junction, thus reducing the number of trapped carriers and, eventually, lowering the afterpulsing probability. The resulting detection system achieves a maximum count rate higher than 650 Mcount/s with an afterpulsing probability of about 1.5%, a photon detection efficiency greater than 30% at 1550 nm and a temporal resolution of less than 90 ps (FWHM).

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“…Some tasks require free-running operation of the detector because the arrival time of the photons is unknown or they are spread over a long time slot (tens of microseconds). At these wavelengths, InGaAs/InP single photon avalanche diodes (SPADs) are the most commonly used because of their convenient and robust operation, compact size and low price but they are usually limited to gated-mode operation 10,15 .…”

Section: Introductionmentioning

confidence: 99%

Low noise InGaAs/InP single-photon negative feedback avalanche diodes: characterization and applications

Boso¹,

Korzh²,

Lunghi³

et al. 2015

SPIE Proceedings

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In recent years, many applications have been proposed that require detection of light signals in the near-infrared range with single-photon sensitivity and time resolution down to few hundreds of picoseconds. InGaAs/InP singlephoton avalanche diodes (SPADs) are a viable choice for these tasks thanks to their compactness and ease-of-use. Unfortunately, their performance is traditionally limited by high dark count rates (DCRs) and afterpulsing effects. However, a recent demonstration of negative feedback avalanche diodes (NFADs), operating in the free-running regime, achieved a DCR down to 1 cps at 10 % photon detection efficiency (PDE) at telecom wavelengths.Here we present our recent results on the characterization of NFAD detectors for temperatures down to approximately 150 K. A FPGA controlled test-bench facilitates the acquisition of all the parameters of interest like PDE, DCR, afterpulsing probability etc.We also demonstrate the performance of the detector in different applications: In particular, with low-temperature NFADs, we achieved high secret key rates with quantum key distribution over fiber links between 100-300 km. But low noise InGaAs/InP SPADs will certainly find applications in yet unexplored fields like photodynamic therapy, near infrared diffuse optical spectroscopy and many more. For example with a large area detector, we made timeresolved measurements of singlet-oxygen luminescence from a standard Rose Bengal dye in aqueous solution.

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Gate-Free InGaAs/InP Single-Photon Detector Working at Up to 100 Mcount/s

Cited by 18 publications

References 19 publications

Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode

InGaAs/InP single-photon detector with low noise, low timing jitter and high count rate

Low noise InGaAs/InP single-photon negative feedback avalanche diodes: characterization and applications

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