Gate Oxide Reliability on Large-Area Surface Defects in 4H-SiC Epitaxial Wafers

Ishiyama, Osamu; Yamada, K.; Sako, Hideki; Tamura, Kentaro; Kitabatake, Makoto; Senzaki, Junji; Matsuhata, H.

doi:10.7567/ssdm.2013.m-3-3

Cited by 2 publications

(1 citation statement)

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“…Trapezoid-shaped and bar-shaped defects consist of the upstream base (line) and downstream base (line), reported by Sameshima et al 16) and Ishiyama et al 27) Similarly, scraper-shaped defects also have the two lines. A common characteristic of scraper-shaped defects with the other two mentioned defects is that the fluctuation in the thermal oxide thickness occurs only along the downstream line of these defects, resulting in a negative impact on the reliability and the yield of MOS capacitors.…”

Section: Resultsmentioning

confidence: 91%

Characterization of scraper-shaped defects on 4H-SiC epitaxial film surfaces

Sako¹,

Yamashita²,

Sugiyama³

et al. 2014

Jpn. J. Appl. Phys.

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We have found undiscovered defects on a 4H-SiC epitaxial layer, the shape of which resembles a scraper in images taken by confocal differential interference contrast optical microscopy. The surface morphological structure and formation mechanism of the scraper-shaped defects were investigated by atomic force microscopy and grazing incidence monochromatic synchrotron X-ray topography, respectively. The scraper-shaped defects were surface morphological defects consisting of surface asperity and were caused by the migration of interfacial dislocations. The evaluation of the thermal oxide reliability of metal–oxide–semiconductor capacitors fabricated on these defects was performed by time-dependent dielectric breakdown measurement. The degradation of thermal oxide occurred only on the downstream line of the scraper-shaped defects. The thickness of the oxide layer on these defects was also investigated using cross-sectional transmission electron microscopy.

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Section: Resultsmentioning

confidence: 91%