Characterization of Early Breakdown of SiC MOSFET Gate Oxide by Voltage Ramp Tests

Zheng, Yuqian; Potera, Rahul; Witt, Tony

doi:10.1109/irps46558.2021.9405196

Cited by 7 publications

(4 citation statements)

References 16 publications

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“…Other reports [29], [30], [31] show the presence of two phases in the dynamics of the shift, as shown in Fig. 9, which can be ascribed to the competition of two distinct trapping processes.…”

Section: A Threshold Voltage Shift In Gan and Sic Transistorsmentioning

confidence: 53%

“…Also, electron trapping during tests can relax the field on the oxide, further contributing to the aforementioned overestimation [50]. Recommendations aimed at avoiding excessive trapping that can lead to overestimations are to keep the stress field under a specific threshold, under 8.5 mV/cm according to Liu et al [29] and under 7 mV/cm according to Zheng et al [31].…”

Section: E Gate Oxide Failure In Sic Mosfetsmentioning

confidence: 99%

“…For this reason, methods to detect early failures in manufactured devices are strongly needed. For instance, Zheng et al [31] proposed a voltage ramp at relatively high voltages, whereas Miki et al [52] proposed the use of repeated V th measurements, to exclude transient instabilities.…”

Section: E Gate Oxide Failure In Sic Mosfetsmentioning

confidence: 99%

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Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo,

Favero,

Marcuzzi

et al. 2024

IEEE Trans. Electron Devices

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We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Material properties and structural differences among GaN and SiC devices are first discussed. Based on the analysis of different commercially available GaN and SiC power transistors, we describe the state-of-the-art of these technologies, highlighting the preferential power conversion topologies and the key characteristics of each technological platform. Current and future fields of application for GaN and SiC devices are also reviewed. The article also reports on the main reliability aspects related to both technologies. For GaN HEMTs, threshold voltage stability, dynamic ON-resistance, and breakdown limitation are described, whereas for SiC MOSFETs the analysis also focuses on gate oxide failure and short-circuit (SC) robustness. Finally, we give an overview on the perspective of such materials in different fields of interest. An indication of possible future improvements and developments for both technologies is drawn. The requirements for hybrid converters, along with Manuscript

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Section: A Threshold Voltage Shift In Gan and Sic Transistorsmentioning

confidence: 53%

Section: E Gate Oxide Failure In Sic Mosfetsmentioning

confidence: 99%

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Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo,

Favero,

Marcuzzi

et al. 2024

IEEE Trans. Electron Devices

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“…In addition to the TDDB, we also present the gate oxide reliability as determined via voltage RAMP measurements in figure 10. The voltage was ramped in gate voltage (V g ) steps of 100 mV until device breakdown [12,13]. Regardless of whether the results were obtained from TDDB or RAMP measurements, it is noticeable that the Q BD distribution produced by the SiO 2 of the poly-gate sample is approximately one order of magnitude larger.…”

Section: Time-dependent Dielectric Breakdown (Tddb) and Ramp-to-break...mentioning

confidence: 99%

Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate

Wan¹,

Zhang²,

Lu³

et al. 2022

Semicond. Sci. Technol.

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The interface states and reliability of 4H-SiC MOSFETs with thermal gate oxides have been researched widely. Several reports have researched the gate oxide process itself, but the effects of subsequent processes should not be ignored. In this paper, the reliability of thermal gate oxide films followed by polysilicon gate (poly gate) process, which are widely used in MOSFET manufacture, and Al gates were compared. The poly-gate samples markedly affected the performance measured by time-zero dielectric breakdown and time-dependent dielectric breakdown methods because the phosphorus content diffused during poly-gate formatting; this was especially advantageous in reducing leakage current and improving the charge-to-breakdown (QBD). After electronic characteristics measurements, scanning electron microscopy cross-sections were also used to analyze the breakdown mechanism. We observed an intermediate layer between the Al gate and the oxide that may cause the barrier height to be smaller than that of the poly-gate. The Al work function and polysilicon Fermi level determine the gate leakage currents and the resultant gate oxide reliability, whereas the Al2O3 gate sample has a smaller work function offset (0.7 eV) than ideal Al gate and poly-gate samples. The results imply that the reliability of the Al gate samples may be an intrinsic problem.

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Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs

Shi

Zhu

Qian

et al. 2023

2023 IEEE International Reliability Physics Symposium (IRPS)

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Characterization of Early Breakdown of SiC MOSFET Gate Oxide by Voltage Ramp Tests

Cited by 7 publications

References 16 publications

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate

Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs

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