Gate-recessed integrated E/D GaN HEMT technology with f<sub>T</sub>/f<sub>max</sub> &gt;300 GHz

Schuette, Michael L.; Ketterson, A.; Song, Bo; Chou, Tso-Min; Pilla, Manyam; Tserng, H.Q.; Gao, Xiang; Guo, Shiping; Fay, Patrick; Xing, Huili Grace; Saunier, P.

doi:10.1109/led.2013.2257657

Cited by 98 publications

(39 citation statements)

References 15 publications

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“…To date, there has only been limited work comparing RF and DC characteristics of AlGaN/GaN HEMTs after proton irradiation [3] [6]. In this paper, we report the effects of 1.8-MeV proton irradiation up to a fluence of cm on the S parameters, current gain, current-gain cutoff frequency ( ), and maximum oscillation frequency ( ) [8] [9] of AlGaN/GaN HEMTs. There is significantly more relative degradation in the RF operating characteristics than in the DC parameters as a result of fast bulk and surface traps induced by the proton irradiation.…”

Section: Introductionmentioning

confidence: 98%

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Chen

Zhang

et al. 2014

IEEE Trans. Nucl. Sci.

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AlGaN/GaN high electron mobility transistors (HEMTs) irradiated with 1.8-MeV protons show more relative degradation in RF power/current gain, cutoff frequency , and maximum oscillation frequency than DC transconductance. These result from radiation-induced increases in fast bulk and surface trap densities, as well as increasing impedance mismatch at high frequencies with increasing proton fluence.-rich MBE devices show less degradation in DC transconductance, but more degradation in RF gain than Ga-rich devices.

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Section: Introductionmentioning

confidence: 98%

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Chen

Zhang

et al. 2014

IEEE Trans. Nucl. Sci.

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“…Achieving both attributes simultaneously in a single device often involves trading off current gain cutoff frequency ( f T ) and maximum frequency of oscillation ( f max ) performance for breakdown voltage (V B K ). The MMW frequency potential of vertically-scaled GaN-based transistors has been demonstrated by heterostructures utilizing AlN barrier layers, producing HEMTs with f T greater than 450 GHz and f max nearing 600 GHz [1], and InAlN barrier layers, where f T and f max of greater than 300 GHz have been achieved [2]. Device characteristics of heterostructures employing scaled InAlN barrier layers down to 3 nm have been demonstrated, including excellent thermal stability up to 1000°C [3].…”

Section: Introductionmentioning

confidence: 99%

<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit

Downey

Meyer

Katzer

et al. 2014

IEEE Electron Device Lett.

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A high combination of three-terminal breakdown voltage (V BK ) and current gain cutoff frequency (f T ) was achieved with SiN x /InAlN/AlN/GaN metal-insulatorsemiconductor high-electron mobility transistors (MIS-HEMTs). A 1-nm SiN x gate dielectric was deposited ex situ in a molecular beam epitaxy system and used to increase the carrier density of the 2-D electron gas under an ultrathin InAlN/AlN (2.3 nm/1 nm) barrier. Passivated MIS-HEMTs with a gate length of 80 nm exhibited a drain current density greater than 1.1 A/mm, a peak intrinsic transconductance g m,max of 800 mS/mm, and a maximum frequency of oscillation f max of 230 GHz. The combination of f T of 114 GHz and V BK of 95 V provides a Johnson figure of merit of 10.8 THz · V, which is among the highest reported values for fully passivated GaN HEMTs. A peak power-added efficiency of 37.5% with an output power of 1.25 W/mm and an associated gain of 9.7 dB was obtained by load-pull measurements at 40 GHz. Index Terms-Breakdown voltage, GaN, high-electron mobility transistors (HEMTs), InAlN, SiN x .

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“…Compared with conventional devices reported previously on similar heterostructures, 13 the DC performance is compromised because of the comparatively high as-grown sheet resistance (in Ref. 13, re-grown nþ ohmic contact layers in close proximity to the device were used to reduce access resistance), and the large on-resistance and low transconductance is caused by the long "effective" gate length originating from having 4 gates in series in the grating-gate devices reported here.…”

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confidence: 68%

Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

Zhao

Chen

et al. 2014

Applied Physics Letters

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In this work, signatures of plasma waves in GaN-based high electron mobility transistors were observed by direct electrical measurement at room temperature. Periodic grating-gate device structures were fabricated and characterized by on-wafer G-band (140–220 GHz) s-parameter measurements as a function of gate bias voltage and device geometry. A physics-based equivalent circuit model was used to assist in interpreting the measured s-parameters. The kinetic inductance extracted from the measurement data matches well with theoretical predictions, consistent with direct observation of plasma wave-related effects in GaN-channel devices at room temperature. This observation of electrically significant room-temperature plasma-wave effects in GaN-channel devices may have implications for future millimeter-wave and THz device concepts and designs.

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Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz

Cited by 98 publications

References 15 publications

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit

Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

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Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

Cited by 98 publications

References 15 publications

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit

Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

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Resources

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Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz