Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes

Grasser, T.; Waltl, Michael; Wimmer, Yannick; Goes, Wolfgang; Kosik, Robert; Rzepa, G.; Reisinger, H.; Pobegen, Gregor; El-Sayed, Al-Moatasem; Shluger, Alexander L.; Kaczer, B.

doi:10.1109/iedm.2015.7409739

Cited by 37 publications

(21 citation statements)

References 12 publications

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“…The instabilities of modern MOSFETs have a number of sources: bias temperature instabilities (BTI) [1][2][3][4][5][6][7], hot carrier ageing (HCA) [8][9][10], and random telegraph noise [11][12][13][14][15][16][17]. To increase the instabilities and make them measurable, it is a common practice to use voltage-acceleration [1][2][3][4][5][6][7][8][9][10]. This works well for both BTI and HCA and the threshold voltage shift, ΔVth, has been reliably measured at pre-specified time by the measure-stress-measure (MSM) technique [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…To increase the instabilities and make them measurable, it is a common practice to use voltage-acceleration [1][2][3][4][5][6][7][8][9][10]. This works well for both BTI and HCA and the threshold voltage shift, ΔVth, has been reliably measured at pre-specified time by the measure-stress-measure (MSM) technique [1][2][3][4][5][6][7][8][9][10]. The MSM technique, however, is inapplicable for the RTN-induced jitter in Vth because of two reasons.…”

Section: Introductionmentioning

confidence: 99%

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An assessment of RTN-induced threshold voltage jitter

Zhang

Manut

Gao

et al. 2019

2019 IEEE 13th International Conference on ASIC (ASICON)

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Power consumption is a key issue especially for the edge devices/units in an IoT system. Lowering operation voltage is an effective way to reduce power. As the overdrive voltage, Vg-Vth, becomes smaller, the device is more vulnerable to threshold voltage jitters. One source for the jitter is Random Telegraph Noises (RTN), which cause a fluctuation in both drain current, ΔId, and threshold voltage, ΔVth. Early works on RTN were focused on measuring ΔId and then evaluate ΔVth from ΔId/gm, where gm is transconductance. The accuracy of ΔVth obtained in this way is not known. The objective of this work is to assess its accuracy by comparing it with the ΔVth directly measured from pulse Id-Vg. It will be shown that the correlation between these two is poor, so that ΔVth must not be evaluated from ΔId/gm. This is caused by the device-specific localized current distribution near the threshold.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An assessment of RTN-induced threshold voltage jitter

Zhang

Manut

Gao

et al. 2019

2019 IEEE 13th International Conference on ASIC (ASICON)

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“…The detailed mechanisms are not known. Our speculation is that defect generation [36] is a process of converting a hydrogen-related precursor into a defect in SiON [37,38] and the structure becomes permanently different from that of the precursor. After neutralization, the GD structure remains different and will not return to that of its precursor.…”

Section: Tablementioning

confidence: 99%

A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO₂/Ge and SiON/Si pMOSFETs

Zhang

et al. 2016

IEEE Trans. Electron Devices

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Abstract-High mobility germanium (Ge) channel is considered as a strong candidate for replacing the Si in pMOSFETs in near future. It has been reported that the conventional power-law degradation kinetics of Si devices is inapplicable to Ge. In this work, further investigation is carried out on defect energy distribution, which clearly shows that this is because the defects in GeO 2 /Ge and SiON/Si devices have different physical properties. Three main differences are: 1) Energy alternating defects (EAD) exist in Ge devices but insignificant in Si; 2) The distribution of as-grown hole traps (AHT) has a tail in the Ge band gap but not in Si, which plays an important role in degradation kinetics and device lifetime prediction; 3) EAD generation in Ge devices requires the injected charge carriers to overcome a 2 nd energy barrier, but not in Si. Taking the above differences into account, the power law kinetics of EAD generation can be successfully restored by following a new procedure, which can assist in the Ge process/device optimization.

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“…In recent studies of small-area p-MOSFETs [169], [170], the direct observation of a loss in the ability of a trap to emit the trapped hole after a certain number of stress/relaxation cycles lends strong support to the proposed explanation [51], [52], [54]. hydrogen released from the Si-H bond [59], [101], [131], [148] may be the possible causes in aiding the structural relaxation of trap to become a more permanent charged trap.…”

Section: Methodsmentioning

confidence: 89%

“…This hypothesis was supported by another study [153] based on the defects behavior in amorphous silicon dioxide. Further, Grasser et al proposed the gatesided hydrogen release model to explain the P component of NBTI [148], [149], the poststress degradation build-up that follows NBTI [150], and the NBTI/PBTI induced slowlyrecovering near-interfacial states generation [151].…”

Section: Dielectricmentioning

confidence: 99%

Bias temperature instability study on switching defects in SiON and high-K gate dielectrics

Tung¹

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provided the initial project direction, gave suggestions in the interpretation of the measurement data, and edited the manuscript.  Dr. A. A. Boo collected the measured threshold voltage shift, analyzed the data collected and drafted the manuscript.  I collected the measured gate current shift (stress-induced leakage current, SILC), analyzed the data collected and assisted in drafting the manuscript. Chapter 4, Section 4.3 is published as Z. Y. Tung and D. S. Ang, "Transient to temporarily permanent and permanent hole trapping transformation in the small area SiON p-MOSFET subjected to negative-bias temperature stress," in Proceedings IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated

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Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes

Cited by 37 publications

References 12 publications

An assessment of RTN-induced threshold voltage jitter

An assessment of RTN-induced threshold voltage jitter

A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO₂/Ge and SiON/Si pMOSFETs

Bias temperature instability study on switching defects in SiON and high-K gate dielectrics

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Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes

Cited by 37 publications

References 12 publications

An assessment of RTN-induced threshold voltage jitter

An assessment of RTN-induced threshold voltage jitter

A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO2/Ge and SiON/Si pMOSFETs

Bias temperature instability study on switching defects in SiON and high-K gate dielectrics

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A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO₂/Ge and SiON/Si pMOSFETs