Gate size dependence of the radiation-produced changes in threshold voltage, mobility, and interface state density in bulk CMOS

Scarpulla, J.; Amram, Andrea; Gin, V.W.; Morse, T.; Nakamura, Kunihisa

doi:10.1109/23.211395

Cited by 17 publications

(2 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The increase in Pbl centers may be a result of polished-induced stress changes at the Si02/Si interface. It has been reported that radiation-induced interface-trap buildup can be affected strongly by interfacial stress [20,21]. Even though the EPR measurements suggest that CMP has affected the interface, the electrical role of the P b l center remains unresolved.…”

Section: In Results and Discussionmentioning

confidence: 94%

Radiation-induced defects in chemical-mechanical polished MOS oxides

Shaneyfelt

Warren

Hetherington

et al. 1995

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Defect centers in chemical-mechanical polished MOS oxides generated by either x-ray irradiation or high-field stress have been characterized using electron paramagnetic resonance and C-V analysis. In x-ray irradiated samples equivalent densities of both oxide trap E' and interface-trap PbO centers were detected in unpolished and polished oxides. In addition, significantly larger (6 times) densities of Pbl centers were observed in irradiated chemical-mechanical polished oxides as opposed to unpolished oxides. This suggests that the polishing process alters the Si02/Si interface. However, the Pbl centers detected in these samples do not respond electrically like conventional interface traps or border traps. This raises questions concerning the electrical and physical nature of Pbl centers in these oxides. The high-field stress data showed no difference in the density of defect centers induced in polished and unpolished oxides. Pbl centers were not observed in either oxide following high-field stress.techniques will be required to fabricate the next generation of radiation-hardened technologies. In fact, Loral Federal Systems utilizes CMP during the manufacture of the radiation-hardened 1 Mbit SRAM ~3 1 .In this paper, we used electron paramagnetic resonance (EPR) to investigate the effects of CMP on the radiation response of thermal oxides. CMP has emerged as the surface planarization method of choice for commercial technologies with feature sizes 5 0.35 pm [4,5]. Films deposited on wafers are planarized by rotating the wafer under pressure against a polishing pad in the presence of a silica-based alkaline slurry. CMP is used to eliminate depth of focus problems for submicron lithography and defects associated with metal thinning that can occur over steep topography. The SEM cross section illustrated in Figure 1 depicts the surface topography before (top photo) and after (bottom photo) CMP of a tetraethylorthosilicate (TEOS) dielectric that was deposited on patterned metal lines. The photos show that chemical-mechanical polishing is effective at

show abstract

Section: In Results and Discussionmentioning

confidence: 94%

Radiation-induced defects in chemical-mechanical polished MOS oxides

Shaneyfelt

Warren

Hetherington

et al. 1995

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…The Pbl centers may be a result of polished-induced stress changes at the SiOz/Si interface. It has been reported that radiation induced interface-trap buildup can be affected strongly by with interfacial stress [7,8]. In addition, we eliminated the possibility that the Pbl centers are a function of the oxide thickness of the sample by wet etching unpolished oxide samples to 0.8 pm, the same oxide thickness as the polished sample.…”

Section: Disclaimermentioning

confidence: 99%

Defect centers in chemical-mechanical polished MOS oxides

Shaneyfelt

Warren

Hetherington

et al. 1995

Microelectronic Engineering

View full text Add to dashboard Cite

Defect centers generated in vacuum-ultraviolet irradiated chemical-mechanical polished oxides have been characterized using electron paramagnetic resonance and C-V analysis. Both oxide trap E', and interface trap PbO centers were detected in unpolished and polished oxides. In addition, another interface defect center known as the Pbl center was only identified in the polished oxides, suggesting that the polishing process altered the SiOdSi interface.

show abstract

Radiation Damage in Silicon MOS Devices

Claeys

Simoen

2002

Radiation Effects in Advanced Semiconductor Materials and Devices

View full text Add to dashboard Cite

Gate size dependence of the radiation-produced changes in threshold voltage, mobility, and interface state density in bulk CMOS

Cited by 17 publications

References 19 publications

Radiation-induced defects in chemical-mechanical polished MOS oxides

Radiation-induced defects in chemical-mechanical polished MOS oxides

Defect centers in chemical-mechanical polished MOS oxides

Radiation Damage in Silicon MOS Devices

Contact Info

Product

Resources

About