Gate-tunable transport characteristics of Bi2S3 nanowire transistors

Kilcoyne, Colin; Ali, Ahmed Hamza H.; Alsaqqa, Ali; Rahman, Ajara A.; Whittaker‐Brooks, Luisa; Sambandamurthy, G.

doi:10.1016/j.ssc.2017.12.005

Cited by 4 publications

(7 citation statements)

References 47 publications

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“…The unusual temperature-dependent photoconductivity and light intensity-dependent TRMC decays of Bi 2 S 3 may be related to the relatively high trap density and large activation energy. It has been also suggested that the charge transport of Bi 2 S 3 thin films is significantly affected by the impurity and defects . The decreased temperature could effectively reduce the charge recombination and enhance the charge transport .…”

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confidence: 99%

“…8 The decreased temperature could effectively reduce the charge recombination and enhance the charge transport. 8 Hence, how to reduce the charge trapping and recombination at room temperature could be an interesting topic for future study. The relatively small photoconductive gain of AgBiS 2 also suggests that the active layer of AgBiS 2 -based photodiodes should not be too thick due to the inferior charge-carrier lifetime.…”

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confidence: 99%

“…Antimony- and bismuth-based chalcogenide semiconductors have attracted tremendous attention in the field of optoelectronics, benefiting from the facile and low-cost processing, superior stability, and ultrahigh and tunable absorption coefficients. In recent years, they have demonstrated great potential for multiple applications, ranging from next-generation thin-film photovoltaics, − photodetectors, , and phototransistors, , to photocatalysis. , In particular, solution-processed Sb 2 S 3 and AgBiS 2 -based solar cells have progressed rapidly. For example, Tang et al proposed a vacuum-assisted solution process for highly efficient Sb 2 S 3 solar cells and achieved a power conversion efficiency (PCE) of 6.78% .…”

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confidence: 99%

“…It has been also suggested that the charge transport of Bi 2 S 3 thin films is significantly affected by the impurity and defects. 8 The decreased temperature could effectively reduce the charge recombination and enhance the charge transport. 8 Hence, how to reduce the charge trapping and recombination at room temperature could be an interesting topic for future study.…”

mentioning

confidence: 99%

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Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films

et al. 2023

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Chalcogenide-based semiconductors have recently emerged as promising candidates for optoelectronic devices, benefiting from their low-cost, solution processability, excellent stability and tunable optoelectronic properties. However, the understanding of their fundamental optoelectronic properties is far behind the success of device performance and starts to limit their further development. To fill this gap, we conduct a comparative study of chalcogenide absorbers across a wide material space, in order to assess their suitability for different types of applications. We utilize optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity techniques to fully analyze their charge-carrier dynamics. We show that antimony-based chalcogenide thin films exhibit relatively low charge-carrier mobilities and short lifetimes, compared with bismuth-based chalcogenides. In particular, AgBiS 2 thin films possess the highest mobility, and Sb 2 S 3 thin films have less energetic disorder, which are beneficial for photovoltaic devices. On the contrary, Bi 2 S 3 showed ultralong carrier lifetime and high photoconductive gain, which is beneficial for designing photoconductors.

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Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films

et al. 2023

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“…The defects in nanowires may fundamentally alter charge transport processes. ,− Specifically, the defects in the form of twin planes and stacking faults can be controllably generated in as-grown nanowires, for example, in the III–V nanowires with periodic twin interfaces between alternating ZB and WZ polytype structures. − Charge transport through such twin interfaces or stacking faults is usually determined by different polytype structure, energy gap, and k -point in the two-dimensional Brillouin zone. For instance, the WZ segment in the GaAs ⟨111⟩ nanowire possesses a larger band gap than the ZB segment, which leads to a reduced conductance in the twin GaAs nanowire .…”

Section: Fundamental Electronic Properties Of Single Nanowire Transis...mentioning

confidence: 99%

Nanowire Electronics: From Nanoscale to Macroscale

et al. 2019

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Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.

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Charge-Carrier Dynamics of Evaporated Bismuth-Based Chalcogenide Thin Films Probed with Time-Resolved Microwave Conductivity

Yao

Jia

et al. 2023

J. Phys. Chem. Lett.

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Chalcogenide-based semiconductors are emerging as a set of highly promising candidates for optoelectronic devices, owing to their low toxicity, costeffectiveness, exceptional stability, and tunable optoelectronic properties. Nonetheless, the limited understanding of charge recombination mechanisms and trap states of these materials is impeding their further development. To fill this gap, we conducted a comprehensive study of bismuth-based chalcogenide thin films and systematically investigated the influence of post-treatments via time-resolved microwave conductivity and temperature-dependent photoluminescence. The key finding in this work is that post-treatment with Bi could effectively enhance the crystallinity and charge-carrier mobility. However, the carrier density also increased significantly after the Bi treatment. On the contrary, post-treatment of evaporated Bi 2 S 3 thin films with sulfur could effectively increase the carrier lifetime and mobility by passivating the trap states on the grain boundaries, which is also consistent with the enhanced radiative recombination efficiency.

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Gate-tunable transport characteristics of Bi2S3 nanowire transistors

Cited by 4 publications

References 47 publications

Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films

Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films

Nanowire Electronics: From Nanoscale to Macroscale

Charge-Carrier Dynamics of Evaporated Bismuth-Based Chalcogenide Thin Films Probed with Time-Resolved Microwave Conductivity

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