2013
DOI: 10.1109/tps.2013.2280379
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Gate Unit With Improved Short-Circuit Detection and Turn-Off Capability for 4.5-kV Press-Pack IGBTs Operated at 4-kA Pulse Current

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Cited by 38 publications
(19 citation statements)
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“…As the load voltage is very small, namely V 0V, in the reverse flywheel current of IGBT, and (5) are approximately identical. The reason is that the current frequency is very low in the IGBT reverse flywheel current, so (10) and (5) are approximately equal.…”
Section: B Experimental Results Of Igbt Reverse Flywheelmentioning
confidence: 99%
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“…As the load voltage is very small, namely V 0V, in the reverse flywheel current of IGBT, and (5) are approximately identical. The reason is that the current frequency is very low in the IGBT reverse flywheel current, so (10) and (5) are approximately equal.…”
Section: B Experimental Results Of Igbt Reverse Flywheelmentioning
confidence: 99%
“…At present, IGBT collector current is detected in three primary ways as following [9]: 1) Using extra detecting elements method such as sensor, transformer, PCB Rogowski coil [10] and magneto-resistive sensor to detect the collector current [11] . But they will lead to the structure complexity and increasing size of the power electronic converter, especially for the converter with a laminated bus-bar structure, and so they are generally unavailable.…”
Section: Introductionmentioning
confidence: 99%
“…In order to use semiconductor switches without series or parallel connection, the chosen primary voltage level is v p = 3 kV, resulting in a total primary current of i p,ges =8000 A. The considered switching units are 4.5 kV-1200 A-IGBT modules [4], which are operated with a pulse current of i p,mod = 8 kA/4 = 2 kA. The 4 active bouncer modules are connected in series to the main capacitor bank.…”
Section: Modulator Conceptmentioning
confidence: 99%
“…A fast protection function for IGBT modules was recently proposed by an evaluation of the fault current value through the di/dt feedback signal which is based on the voltage across the parasitic inductance between the Kelvin emitter and the power emitter of an IGBT module [9], [10]. In [11], a fault current detection using a printed circuit board Rogowski coil is used in a gate driver to protect 4.5 kV press-pack IGBTs operated at 4 kA of pulse current. Detection circuits using the turn-on switching characteristic to protect IGBTs under short-circuit failures are represented in [12]- [15].…”
Section: Introductionmentioning
confidence: 99%