Gate voltage induced phase transition in magnetite nanowires

Gooth, Johannes; Zierold, Robert; Gluschke, Jan G.; Boehnert, Tim; Edinger, Stefan; Barth, Sven; Nielsch, Kornelius

doi:10.1063/1.4793529

Cited by 21 publications

(14 citation statements)

References 34 publications

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“…4,5 More importantly, the high Curie temperature of Fe 3 O 4 is desirable in room temperature spintronics applications and advantageous compared with other half metallic materials such as La 0.7 Sr 0.3 MnO 3 . 6 These fascinating properties have triggered intensive studies on Fe 3 O 4 in the past few decades, and various spin dependent effects such as the spin Seebeck effect, 7 spin filtering effect, 8 and gate voltage-induced phase transition 9 have been exploited.…”

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confidence: 99%

Increasing spin polarization in Fe3O4 films by engineering antiphase boundary densities

Liu

Yin

Sun

et al. 2017

Applied Physics Letters

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We present a systematical study on the evolution of antiphase boundary (APB) densities in Fe 3 O 4 films, which were prepared by pulsed laser deposition and post annealing at different temperatures. By measuring the electron-phonon coupling parameter and using Allen's formula, we evaluate the films' antiphase boundary densities, which show a decreasing tendency with increasing annealing temperature. Consequently, a 50% increase of spin polarization in Fe 3 O 4 films is achieved, and a 110% increase of the magnetoresistance ratio was found in 900 C annealed Fe 3 O 4 films compared to the as-grown sample. This work could contribute to the effective manipulation of APB densities and spin polarization in Fe 3 O 4 films, which is desirable for the application of spintronics devices based on Fe 3 O 4 films.

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confidence: 99%

Increasing spin polarization in Fe3O4 films by engineering antiphase boundary densities

Liu

Yin

Sun

et al. 2017

Applied Physics Letters

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“…It has a nearly fully spin polarized electron band at the Fermi level (half-metallic character) and a high Curie temperature of 858 K, which make it a promising candidate for room temperature spintronic devices and applications 1 2 3 . Recently, interesting spin transport properties in Fe 3 O 4 have been reported, i.e., a spin Seebeck effect 4 , a spin filter effect 5 , an electrical field-induced phase transition 6 7 8 , large transversal magnetoresitance (MR) 9 10 , and charge-orbital ordering driven magnetic state switching in Fe 3 O 4 /MgO/Fe 3 O 4 junctions 11 . Yet, initial efforts to exploit its half metallic nature in magnetic tunnel junction (MTJ) structures have been far from promising 11 .…”

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confidence: 99%

Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions

Coileáin

Abid

et al. 2015

Sci Rep

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Magnetite is a half-metal with a high Curie temperature of 858 K, making it a promising candidate for magnetic tunnel junctions (MTJs). Yet, initial efforts to exploit its half metallic nature in Fe3O4/MgO/Fe3O4 MTJ structures have been far from promising. Finding suitable barrier layer materials, which keep the half metallic nature of Fe3O4 at the interface between Fe3O4 layers and barrier layer, is one of main challenges in this field. Two-dimensional (2D) materials may be good candidates for this purpose. Molybdenum disulfide (MoS2) is a transition metal dichalcogenide (TMD) semiconductor with distinctive electronic, optical, and catalytic properties. Here, we show based on the first principle calculations that Fe3O4 keeps a nearly fully spin polarized electron band at the interface between MoS2 and Fe3O4. We also present the first attempt to fabricate the Fe3O4/MoS2/Fe3O4 MTJs. A clear tunneling magnetoresistance (TMR) signal was observed below 200 K. Thus, our experimental and theoretical studies indicate that MoS2 can be a good barrier material for Fe3O4 based MTJs. Our calculations also indicate that junctions incorporating monolayer or bilayer MoS2 are metallic.

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“…Magnetite, Fe 3 O 4 , is an important transition metal oxide with a nearly fully spin polarized electron band at the Fermi level (half-metallic character) and a high Curie temperature of 858 K, which make it a promising candidate for room temperature spintronic devices and applications. [14][15][16] Recently, interesting magnetic and transport properties in epitaxial Fe 3 O 4 have been reported, i.e., magnetism in nanometerthick magnetite, 17 large orbital moment in nanoscale magnetite, 18 giant magnetization in nanometer-thick magnetite, 19 a spin Seebeck effect, 20 a spin filter effect, 21 electrical fieldinduced phase transition, [22][23][24] large transversal magnetoresitance (MR), 25,26 and spin valve effect. [27][28][29] However, initial efforts in exploiting its half metallic nature in magnetic tunnel junctions (MTJ) have been far from promising.…”

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confidence: 99%

Magnetic and transport properties of epitaxial stepped Fe3O4(100) thin films

Syrlybekov

Mauit

et al. 2014

Applied Physics Letters

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We investigate the magnetic and transport properties of epitaxial stepped Fe3O4 thin films grown with different thicknesses. Magnetization measurements suggest that the steps induce additional anisotropy, which has an easy axis perpendicular to steps and the hard axis along the steps. Separate local transport measurements, with nano-gap contacts along a single step and perpendicular to a single step, suggest the formation of a high density of anti-phase boundaries (APBs) at the step edges are responsible for the step induced anisotropy. Our local transport measurements also indicate that APBs distort the long range charge-ordering of magnetite.

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Gate voltage induced phase transition in magnetite nanowires

Abstract: Articles you may be interested inMultistep metal insulator transition in VO2 nanowires on Al2O3 (0001) substrates Appl. Phys. Lett.

Cited by 21 publications

References 34 publications

Increasing spin polarization in Fe3O4 films by engineering antiphase boundary densities

Increasing spin polarization in Fe3O4 films by engineering antiphase boundary densities

Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions

Magnetic and transport properties of epitaxial stepped Fe3O4(100) thin films

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