Gated spin relaxation in (110)-oriented quantum wells

Spin dynamics in semiconductors

“…Other investigations include the achievement of high temperature gate control of spin lifetime [193,671,672], which can be useful in spin switch devices or spin field-effect transistors. The typical results of spin lifetime as a function of the electric field E along the growth direction are shown in Fig.…”

Influence of interface interruption on spin relaxation in GaAs (110) quantum wells

“…So, it has no contribution to spin relaxation in (1 1 0) GaAs QWs. In symmetrical QWs SIA term vanishes [11]. It can arise from some built-in asymmetry of the structure or be induced by an externally applied electric field.…”

“…It can arise from some built-in asymmetry of the structure or be induced by an externally applied electric field. Such asymmetry could result from alloy fluctuations or from differences of top and bottom interface morphology for the GaAs QWs [11]. Fig.…”

“…An improvement of interface morphology is expected to suppress the DP interaction through the decrease of the Rashba or structural inversion asymmetry (SIA) component [11].…”

Spin relaxation in a quantum well by phonon scatterings

“…The spin relaxation in quantum wells has been extensively studied in a number of theoretical [3][4][5][6][7][8][9][10][11][12][13][14] and experimental [15][16][17][18][19][20][21][22][23][24][25][26][27] works. One of the major mechanisms of the spin relaxation in n-doped quantum wells [28,29] is the Dyakonov-Perel (DP) mechanism [3,[30][31][32] which is due to the spin precession around the effective magnetic field induced by the Dresselhaus spin-orbit interaction (SOI) [33] and the Rashba SOI [34][35][36][37].…”