ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)
DOI: 10.1109/lpe.2000.876763
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Gated-V/sub dd/: a circuit technique to reduce leakage in deep-submicron cache memories

Abstract: Deep-submicron CMOS designs have resulted in large leakage energy dissipation in microprocessors. While SRAM cells in onchip cache memories always contribute to this leakage, there is a large variability in active cell usage both within and across applications. This paper explores an integrated architectural and circuitlevel approach to reducing leakage energy dissipation in instruction caches. We propose, gated-V dd , a circuit-level technique to gate the supply voltage and reduce leakage in unused SRAM cells… Show more

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Cited by 175 publications
(291 citation statements)
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“…At smaller cache sizes, unused sets can be turned off to reduce the static energy consumption [24]. The miss ratio was used by Yang et al [30] to guide cache reconfiguration, varying the size by masking index bits through a shifting operation.…”
Section: Set-only Reconfigurationmentioning
confidence: 99%
See 3 more Smart Citations
“…At smaller cache sizes, unused sets can be turned off to reduce the static energy consumption [24]. The miss ratio was used by Yang et al [30] to guide cache reconfiguration, varying the size by masking index bits through a shifting operation.…”
Section: Set-only Reconfigurationmentioning
confidence: 99%
“…This was performed once, before an application started execution. They also used way-shutdown to decrease cache size by turning-off unused ways using the Gated-V dd method [24]. However, they did not address the changes required to the control signals when adding in way-shutdown.…”
Section: Way-only Reconfigurationmentioning
confidence: 99%
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“…Using an inexpensive decaying 4T Temperature sensor [19] we monitor temperature and bias the ground transistor appropriately to yield approximately stable decay times across a wide range of temperatures. 4T decay times converge to a specific value at high temperatures [16] so we only have to adjust decay times at low temperatures. Furthermore, as it is shown in [19] for 4T cells, the decay period of 5T cells is not affected by process variation, except by negligible amounts at low temperatures.…”
Section: Efficient Analog Implementationsmentioning
confidence: 99%