2020
DOI: 10.3390/cryst10090759
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GDC Buffer Layer Synthesized by Reactive Magnetron Sputtering: Effect of Total Pressure and Thickness on SOFC Performances

Abstract: Gadolinia-doped ceria (GDC) buffer layers were synthesized by reactive magnetron sputtering under different total pressures and different thickness. All as-deposited and after an annealing treatment during two hours under air at 1000 °C coating presents a face centered cubic (f.c.c) structure of ceria with dense and adhesive morphology. The cell synthesized under 0.1 Pa and 0.57 µm present the best performances. (open-circuit voltage (OCV): 1.133 eV and power density: 1650 mW·cm−2 @ 800 mA·cm−2 at 790 °C).

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Cited by 9 publications
(5 citation statements)
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“…With 8 μm, PBM shows moderate ASR increases, while PrCe5 remains stable. Those results suggest a 3.5 μm-GDC layer as optimal for praseodymium barium double perovskite manganite electrodes in SOFC anodes, differing from previous studies of Briois et al recommending a ∼0.57 μm-GDC layer 32. The 3.5 μm-GDC layer thickness achieves the lowest ASR after 220 h at T = 750 °C for our Ba-rich double layered perovskite anodes in a hydrogen environment, supporting the effectiveness of 2−4 μm-GDC layers for SOFC anode performance and mass production, as reported previously 58.…”
contrasting
confidence: 90%
See 1 more Smart Citation
“…With 8 μm, PBM shows moderate ASR increases, while PrCe5 remains stable. Those results suggest a 3.5 μm-GDC layer as optimal for praseodymium barium double perovskite manganite electrodes in SOFC anodes, differing from previous studies of Briois et al recommending a ∼0.57 μm-GDC layer 32. The 3.5 μm-GDC layer thickness achieves the lowest ASR after 220 h at T = 750 °C for our Ba-rich double layered perovskite anodes in a hydrogen environment, supporting the effectiveness of 2−4 μm-GDC layers for SOFC anode performance and mass production, as reported previously 58.…”
contrasting
confidence: 90%
“…Symmetrical cells were fabricated using commercial 230 μm-thick 8YSZ disks, each measuring 25 mm in diameter (Tosoh). To prevent ionic interdiffusion and chemical reactions, a Ce 0.9 Gd 0.1 O 1.95 (GDC) buffer layer was deposited on both sides of the electrolyte through physical vapor deposition. , The experimental setup comprises a 100 L Alcatel SCM 650 sputtering chamber, evacuated by an integrated system that includes an XDS35i dry pump and a 5401CP turbo-molecular pump. This chamber is outfitted with a trio of magnetron targets, each 200 mm in diameter, and a rotating substrate holder 620 mm in diameter, positioned parallel to the targets at an approximate distance of 110 mm.…”
Section: Methodsmentioning
confidence: 99%
“…Figure 2 shows cross-sectional SEM images of the magnetron sputtered SDC electrolyte obtained on the anode support after deposition and subsequent annealing at 1000 °C in air. It is known that high-temperature annealing provides the growth in crystallinity of magnetron sputtered YSZ and GDC layers [ 42 , 43 ]. The 5 µm thick electrolyte has good adhesion to the substrate.…”
Section: Resultsmentioning
confidence: 99%
“…Various methods are used for the deposition of barrier layers in SOFC technology [ 21 , 22 ]: ceramic methods, such as screen-printing [ 23 ] and tape calendering [ 24 , 25 ]; vacuum deposition technologies, e.g., magnetron sputtering [ 26 , 27 ], pulsed laser deposition [ 10 , 28 ], and physical vapor deposition (PVD) [ 29 ]; aerosol-spraying methods under atmospheric [ 30 ] and reduced pressures [ 31 ]; and colloidal and solution technologies—electrophoretic deposition [ 32 , 33 ], dip-coating and sol-gel [ 34 , 35 ], suspension centrifugation [ 36 ] etc. One of the flexible, easy-to-implement, and cheap technologies is electrophoretic deposition (EPD), which does not require high-tech equipment and allows the deposition of coatings at room temperature in ambient air with a sufficiently high deposition rate of ~1–10 μm per 1 min [ 37 ].…”
Section: Introductionmentioning
confidence: 99%