Ge nano-layer fabricated by high-fluence low-energy ion implantation

70Ge nanocrystals in SiO2 films under neutron irradiation: A Raman and photoluminescence study

“…There is no signal from 70 Ge nanocrystals unless the annealing time is prolong to 1 h, which is longer than the time (0.5 h) used for the crystallization of as-implanted samples. In our previous work [6], Ge nanocrystals were directly prepared by ion-implantation. During ion-implantation, the accelerated Ge + ions were engaged in the sputtering of atoms from nanocrystals, which impaired the growth of nanocrystals.…”

“…Among them, ion-implantation is an effective method for its compatibility with Si technology and its implanting precision. A lot of work has been done to prepare natural Ge and 74 Ge nanocrystals by ion-implantation [5][6][7][8][9][10]. Since neutron irradiation has been widely used to improve properties of materials and the physical properties of isotopically enriched nanocrystals depend on their isotopic composition, the research on 70 Ge nanocrystals under neutron irradiation is important [11].…”

“…Since neutron irradiation has been widely used to improve properties of materials and the physical properties of isotopically enriched nanocrystals depend on their isotopic composition, the research on 70 Ge nanocrystals under neutron irradiation is important [11]. In our previous work, natural Ge and 74 Ge nanocrystals had been prepared [6,8,9]. Compared to 74 Ge and other Ge isotopes, 70 Ge has a smaller atomic mass (M), which makes the phonon energy shift to high energy side, because phonon frequency x is proportional to M À1/2 [11].…”