Ge-on-Si for Si-based integrated materials and photonic devices

Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Su, Shaojian; Hou, Xue; Zuo, Yuhua; Wang, Qiming

doi:10.1007/s12200-012-0200-2

Cited by 13 publications

(11 citation statements)

References 37 publications

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“…In this context, an attempt to fabricate device on Si based substrate is necessary with heteroepitaxial growth of pure Ge as an active material on Si substrate. On the other words, Ge growth on Si (Ge-on-Si) is more compatible with CMOS circuitry and Si based monolithic integration on a same chip because of its relatively straightforward fabrication technique when compared with free-standing bulk Ge substrate [10][11][12][13]. However, the reports on the detailed electrical transport characterstics using temperature dependent I-V characteristics of the graphene/Ge junctions that reveals the nature of the interface are quiet scarce.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

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Section: Introductionmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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“…Ge was chosen because it is also an important semiconductor34. The electric field intensities were simulated by assumption same diameter noble metal nanoparticles (Au or Ag) decorated on Ge or Si wafer, respectively.…”

mentioning

confidence: 99%

The Effect of Dielectric Constants on Noble Metal/Semiconductor SERS Enhancement: FDTD Simulation and Experiment Validation of Ag/Ge and Ag/Si Substrates

Wang

Zhang

Liao

et al. 2014

Sci Rep

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The finite-difference time-domain (FDTD) method was employed to simulate the electric field distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation showed that noble metal/Ge had stronger SERS enhancement than noble metal/Si, which was mainly attributed to the different dielectric constants of semiconductors. In order to verify the simulation, Ag nanoparticles with the diameter of ca. 40 nm were grown on Ge or Si wafer (Ag/Ge or Ag/Si) and employed as surface-enhanced Raman scattering substrates to detect analytes in solution. The experiment demonstrated that both the two substrates exhibited excellent performance in the low concentration detection of Rhodamine 6G. Besides, the enhancement factor (1.3 × 109) and relative standard deviation values (less than 11%) of Ag/Ge substrate were both better than those of Ag/Si (2.9 × 107 and less than 15%, respectively), which was consistent with the FDTD simulation. Moreover, Ag nanoparticles were grown in-situ on Ge substrate, which kept the nanoparticles from aggregation in the detection. To data, Ag/Ge substrates showed the best performance for their sensitivity and uniformity among the noble metal/semiconductor ones.

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“…Germanium (Ge), one of the group‐IV semiconductors, is a useful material for silicon (Si)‐based optoelectronic integration owing to its advantageous electronic properties. [ 1 ] For example, the electron and hole mobilities of Ge are 3,900 and 1,900 cm 2 ·V −1 ·s −1 , respectively, whereas those of Si are 1,417 and 471 cm 2 ·V −1 ·s −1 , respectively. [ 1 ] Despite the high bulk mobility, Ge is limited in light emission efficiency: The direct bandgap at the Γ valley is larger than the indirect bandgap at the L valley.…”

Section: Introductionmentioning

confidence: 99%

Evolution of optical phonons in epitaxial Ge_1−ySn_y structures

Kim

Lee

Ryu

et al. 2020

J Raman Spectroscopy

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We report polarized Raman scattering results of Ge1−ySny (0 ≤ y ≤ 0.09) epitaxial layers grown on Ge‐buffered Si substrates. Polarized Raman spectra from the sample surfaces revealed strong Ge–Ge longitudinal optical (LO) phonon responses. The Ge–Ge LO(z) phonon wavenumber decreased systematically as the Sn content increased. Linear fitting results of the Ge–Ge LO(z) phonon wavenumber shifts as a function of Sn content suggested that a partial strain relaxation occurred in the Ge1−ySny layers. Spatially resolved Raman mapping measurements from the cross section of a Ge0.938Sn0.062 samplev showed that the peak wavenumber of the Ge–Ge transverse optical phonon decreased gradually toward the top surface, providing direct evidence that the residual built‐in strain initially formed at the Ge0.938Sn0.062/Ge interface tended to relax gradually along the growth direction. Further, a hydrogen inductively coupled plasma treatment induced a greater homogeneous strain profile in the Ge0.938Sn0.062 layer.

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Ge-on-Si for Si-based integrated materials and photonic devices

Cited by 13 publications

References 37 publications

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

The Effect of Dielectric Constants on Noble Metal/Semiconductor SERS Enhancement: FDTD Simulation and Experiment Validation of Ag/Ge and Ag/Si Substrates

Evolution of optical phonons in epitaxial Ge_1−ySn_y structures

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Ge-on-Si for Si-based integrated materials and photonic devices

Cited by 13 publications

References 37 publications

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

The Effect of Dielectric Constants on Noble Metal/Semiconductor SERS Enhancement: FDTD Simulation and Experiment Validation of Ag/Ge and Ag/Si Substrates

Evolution of optical phonons in epitaxial Ge1−ySny structures

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Evolution of optical phonons in epitaxial Ge_1−ySn_y structures