Ge-rich SiGe thin film deposition by co-sputtering in in-situ and ex-situ solid phase crystallization for photovoltaic applications

Shahahmadi, Seyed Ahmad; Zulkefle, Ahmad Aizan; Arslanoğlu, Hasan; Rana, Shailesh; Bais, Badariah; Akhtaruzzaman, Md.; Alamoud, A.R.M.; Amin, Nowshad

doi:10.1016/j.mssp.2016.08.005

Cited by 12 publications

(6 citation statements)

References 36 publications

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“…Fedala et al measured optical gap values from 1.3 to 2.1 eV using absorption spectroscopy for compositions up to , and an unknown crystallinity and partial pressure of H during magnetron sputtering 40 . Shahahmadi et al found band gap values of 1.2 eV for both the amorphous and crystalline (created by annealing at temperatures up to 550 C) for a single composition of 9 . Hernández-Montero et al measured optical band gap values on a- prepared by low pressure chemical vapor deposition ranging from 0.8 to almost 2 eV, depending on the composition and on the method of evaluation 70 .…”

Section: Discussionmentioning

confidence: 99%

“…Silicon germanium (SiGe) thin film research is largely inspired by assorted applications in several semiconductor devices, such as fibre optics 1 , sensors 2 , solar cells 3 , thin film transistors 4 , Schottky diodes 5 , temperature sensors 6 and bolometers 7 . This activity is being continued with recent papers on new tenders such as mid-infrared photonic circuits (mid-IR PCs) 8 , photovoltaics 9 , supercontinuum waveguides 10 , nanowire field-effect transistors 11 , and the huge number of applications projected over the 2–20 m wavelength ranges 12 , 13 .…”

Section: Introductionmentioning

confidence: 99%

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Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics

Kalas

Zolnai

Sáfrán

et al. 2020

Sci Rep

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The optical parameters of hydrogenated amorphous a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ Si 1 - x Ge x :H layers were measured with focused beam mapping ellipsometry for photon energies from 0.7 to 6.5 eV. The applied single-sample micro-combinatorial technique enables the preparation of a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ Si 1 - x Ge x :H with full range composition spread. Linearly variable composition profile was revealed along the 20 mm long gradient part of the sample by Rutherford backscattering spectrometry and elastic recoil detection analysis. The Cody-Lorentz approach was identified as the best method to describe the optical dispersion of the alloy. The effect of incorporated H on the optical absorption is explained by the lowering of the density of localized states in the mobility gap. It is shown that in the low-dispersion near infrared range the refractive index of the a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_x$$ Si 1 - x Ge x alloy can be comprehended as a linear combination of the optical parameters of the components. The micro-combinatorial sample preparation with mapping ellipsometry is not only suitable for the fabrication of samples with controlled lateral distribution of the concentrations, but also opens new prospects in creating databases of compounds for optical and optoelectonic applications.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics

Kalas

Zolnai

Sáfrán

et al. 2020

Sci Rep

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show abstract

“…al., 2008;Lian & Lin, 2016;Pham & Fang, 2020). Unfortunately, to get a good crystallisation form of SiGe, numerous factors, such as deposition techniques, annealing temperature, and mismatch lattice among the atom of Silicon and Germanium (Shahahmadi et. al., 2016;Pham & Fang, 2020).…”

Section: Introductionmentioning

confidence: 99%

The Effect of SiGe/PTAA Thin Film Thickness as An Active Layer for Solar Cell Application

RANI¹,

Rani²,

Iderus³

et al. 2022

ASMScJ

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This paper presents the results of electrical simulations at different active thickness layers of hybrid photovoltaic devices using GPVDM software. A combination of inorganic n-type semiconductor SiGe and organic p-type semiconductor PTAA has been chosen to be simulated in this research work. The thickness of SiGe and PTAA varies from 100 nm – 500 nm and 1000 rpm – 5000 rpm. The results show that the thickness of both semiconductor affects the electrical properties. Higher current density, Jsc, can be obtained as the thickness of SiGe increases. PTAA as an active layer had affected the value of open-circuit voltage, Voc. The SiGe combination with lower rpm depicted a higher value of Voc than the other combinations. The FF and efficiency rate of the solar panel is also presented in this work. This research focuses on the thickness combination of both semiconductors layer on the performance of its electrical characteristics.

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“…The primary benefits of RF sputtering include the production of thin films that are pinhole-free, have uniform thickness, and can be deposited over a large surface area. In this process, the properties of thin films primarily depend on the substrate temperature, sputtering pressure, RF power, system geometry, and the distance between substrate and target [16][17][18][19]. Most previous studies had focused on the doping of metal on NiO by sol-gel or chemical precipitation methods but reports on the deposition of chromium (Cr)-doped NiO by RF magnetron sputtering are rare.…”

Section: Introductionmentioning

confidence: 99%

Effect of Selective Lateral Chromium Doping by RF Magnetron Sputtering on the Structural, and Opto-Electrical Properties of Nickel Oxide

et al. 2021

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In this study, chromium (Cr)-doped nickel oxide (NiO) thin films were deposited by employing selective lateral doping of Cr in NiO by radio-frequency magnetron sputtering at different doping times ranging from 0 s (undoped) to 80 s. The structural, optical, and electrical properties of the resulting Cr-doped NiO thin films were investigated. Structural investigation from XRD patterns indicated that the grown Cr-doped NiO layer crystallized in a cubic phase. Broadening of the diffraction peak with increasing doping time from 0 s to 80 s led to a reduction in the crystallite size that varied from 23.52 nm to 14.65 nm. Compared with the undoped NiO, the diffraction peak along the (200) plane shifted from left to right as a function of doping time. This result indicated that Cr+3 could easily enter the NiO lattice. Results from the Hall-effect study disclosed that electrical properties of Cr-doped NiO was highly dependent on doping time. The conductivity of NiO was increased with doping time, and the highest conductivity (8.73 × 10−2 Scm−1) was achieved at a doping time of 80 s. Finally, optical investigations revealed that as doping time increased, the optical bandgap of Cr-doped NiO films dropped from 3.43 eV to 3.28 eV. The highest Urbach energy at higher doping time indicated that crystallinity became poorer, and the degree of defects increased with increasing doping time.

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Ge-rich SiGe thin film deposition by co-sputtering in in-situ and ex-situ solid phase crystallization for photovoltaic applications

Cited by 12 publications

References 36 publications

Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics

Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics

The Effect of SiGe/PTAA Thin Film Thickness as An Active Layer for Solar Cell Application

Effect of Selective Lateral Chromium Doping by RF Magnetron Sputtering on the Structural, and Opto-Electrical Properties of Nickel Oxide

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