Ge semiconductor devices for cryogenic power electronics - II

Ward, R.R.; Dawson, W.J.; Kirschman, Randall; Mueller, O.; Patterson, R. S.; Dickman, J.E.; Hammoud, Ahmad

doi:10.1051/jp420020038

Cited by 10 publications

(1 citation statement)

References 16 publications

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“…Decades ago it was found that Ge junction field-effect transistors (JFETs) could exhibit excellent characteristics down to 4 K (-269°C) (23). Further investigations had shown that, with proper design and biasing, Ge devices, including bipolar transistors, could operate to deep cryogenic temperatures (1,24). In contrast, among Si devices only MOSFETs operate satisfactorily below ~80 K; Si JFETs and standard Si bipolar devices are not useable at deep cryogenic temperatures.…”

Section: Semiconductor Materials Choicesmentioning

confidence: 99%

SiGe and Ge Cryogenic Power Transistors

et al. 2006

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We have undertaken development of power semiconductor devices based on SiGe and Ge, intended for operation over a wide temperature range, from room temperature down to deep cryogenic temperatures, ~30 K (~ -240{degree sign}C). We summarize results for Ge diodes (~10 A/400 V), Ge junction field-effect transistors (Ge JFETs, ~0.5 A/30 V), Ge metal-insulator field-effect transistors (Ge MIS-FETs ~1 A/20 V) and SiGe heterojunction bipolar transistors (SiGe HBTs, ~10 A/50 V). As a practical demonstration, we have used SiGe HBTs and SiGe diodes as the active devices in 100-W power-conversion circuits, operating from room temperature down to ~30 K (~ -240{degree sign}C) with increased efficiency as temperature de-creases. Our developments demonstrate the potential of alternative semiconductor materials to provide excellent performance for power applications down to deep cryogenic temperatures.

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Section: Semiconductor Materials Choicesmentioning

confidence: 99%