Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

Двуреченский, А. В.; Smagina, J. V.; Groetzschel, R.; Zinovyev, V. A.; Armbrister, V. A.; Novikov, P. L.; Teys, S. A.; Гутаковский, А. К.

doi:10.1016/j.surfcoat.2004.08.082

Cited by 26 publications

(24 citation statements)

References 13 publications

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“…For the majority of modern technological devices, a regular array of uniform components is required [117]. This is because the coupling between nanostructures in the array must be able to be controlled to tailor the optoelectronic properties of the device.…”

Section: Tailoring Metal Nanoarraysmentioning

confidence: 99%

Plasmas meet plasmonics

2012

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Abstract. The term 'plasmon' was first coined in 1956 to describe collective electronic oscillations in solids which were very similar to electronic oscillations/surface waves in a plasma discharge (effectively the same formulae can be used to describe the frequencies of these physical phenomena). Surface waves originating in a plasma were initially considered to be just a tool for basic research, until they were successfully used for the generation of large-area plasmas for nanoscale materials synthesis and processing. To demonstrate the synergies between 'plasmons' and 'plasmas', these large-area plasmas can be used to make plasmonic nanostructures which functionally enhance a range of emerging devices. The incorporation of plasmafabricated metal-based nanostructures into plasmonic devices is the missing link needed to bridge not only surface waves from traditional plasma physics and surface plasmons from optics, but also, more topically, macroscopic gaseous and nanoscale metal plasmas. This article first presents a brief review of surface waves and surface plasmons, then describe how these areas of research may be linked through Plasma Nanoscience showing, by closely looking at the essential physics as well as current and future applications, how everything old, is new, once again.

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Section: Tailoring Metal Nanoarraysmentioning

confidence: 99%

Plasmas meet plasmonics

2012

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“…For size selection in conventional MBE, the value F ¼ 0 should be used [9]. In continuous IBAD the ion bombardment generates a flux of adatoms, approximately corresponding to values F % 0:01 [6]. For pulsed IBAD the flux is much smaller, 0 < F ( 0:01 because the detached surface adatoms recombine with surface defects between pulses.…”

Section: The Continuous Growth Equationmentioning

confidence: 99%

“…The difference of IBAD and molecule beam epitaxy (MBE) growth is experimentally studied for Ge quantum dots on Ge/Si heteroepitaxy [6,7]. The pulsed IBAD enables narrowing of size distribution, when compared to distributions of conventional molecule beam epitaxy (MBE) growth, but the continuous IBAD enlarges notably the size dispersion compared to MBE [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…The pulsed IBAD enables narrowing of size distribution, when compared to distributions of conventional molecule beam epitaxy (MBE) growth, but the continuous IBAD enlarges notably the size dispersion compared to MBE [6,7]. The physical effect of IBAD is that it lowers the effective energy barrier between 2D and 3D quantum dot configurations by making lattice imperfections to the substrate and enhancing the 3D dot nucleation at dislocations.…”

Section: Introductionmentioning

confidence: 99%

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Size selected growth of nanodots: Ion beam assisted deposition and transition from 2D to 3D growth

Riekki

Koponen

2012

Nuclear Instruments and Methods in Physics Research Section B:

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“…However, establishing a method to achieve suciently uniform island sizes with regular spatial distribution remains a critical issue. Substantial research focused on the size distribution of the islands because such islands are an important aspect in practical application [9]. The conventional way to control island formation (size, shape and density) is to vary growth conditions by altering substrate temperature and molecular ux [9].…”

Section: Introductionmentioning

confidence: 99%

Formation of Uniform Germanium Islands on Silicon Substrate Using Nickel as Catalyst by Thermal Evaporation Method

et al. 2015

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Uniform germanium islands (GIs) were grown on Si (100) using a nickel layer as catalyst through the physical vapor deposition of germanium (Ge) powder at 1000• C at dierent deposition times. Prior to the deposition of Ge layer, nickel (Ni) catalyst was deposited on silicon substrates via radio frequency magnetron sputtering technique. Scanning electron microscopy results showed that the increase in deposition time resulted in a variation in surface morphology. Energy dispersive X-ray spectrometer analysis found that the GI samples composed of Ni element indicating the role of Ni in uniform Ge islands formation. The X-ray diraction pattern spectra revealed that the GIs exhibited a Ge cubic structure and the intensity of Ge peaks varies with deposition time. In-plane strain indicated that the strain caused by the substrate is tensile and changed to compressive strain at the longer deposition time. The Raman spectra exhibited a red shift in the Ge-Ge peak, compared with the bulk Ge, as a result of compressive strain of the GIs. Fourier transform infrared spectrum analysis also indicated that the optical band gap Eg values of GIs can be varied by deposition time.

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Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

Cited by 26 publications

References 13 publications

Plasmas meet plasmonics

Plasmas meet plasmonics

Size selected growth of nanodots: Ion beam assisted deposition and transition from 2D to 3D growth

Formation of Uniform Germanium Islands on Silicon Substrate Using Nickel as Catalyst by Thermal Evaporation Method

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