Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm

Dumas, Derek C. S.; Gallacher, Kevin; Rhead, Stephen; Myronov, Maksym; Leadley, D. R.; Paul, Douglas J.

doi:10.1364/oe.22.019284

Cited by 27 publications

(29 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We use an 8-band k·p model here to simulate the Γ point band structure of Ge/SiGe quantum well material, taking into consideration that the previous theoretical results agreed well with experimental data. 11,12 The basic principle of k·p method is to expand the Schrödinger equation by a series of lattice periodic functions. [17][18][19] Eight basis functions are chosen in this model including spin degeneracy…”

Section: A Hamiltonian Of the 8-band Modelmentioning

confidence: 99%

“…Experimental results also show that the device with higher Ge content in the barrier has lower contrast ratio. 11,16 Fig . 3 shows the absorption edge energies of Ge/SiGe quantum wells as a function of barrier Ge content with different well widths.…”

Section: A Analysis Of Major Parameters In a Ge/sige Quantum Wellmentioning

confidence: 99%

“…Ge/SiGe quantum well has been investigated as an appealing CMOS compatible modulation material and shown good potentials in aspects of compact waveguide integration, 10 low driving voltage, 11,12 high speed operation and low energy consumption. 13 Owing to the quantum-confined Stark effect (QCSE), 14 the absorption spectra of Ge/SiGe quantum well have a red shift with electric field applied across the structure, first demonstrated in 2005.…”

Section: Introductionmentioning

confidence: 99%

“…To neutralize this effect, bias voltage of 2-5 V is required to perform at 1550 nm. 10,11,13,15,16 Thus the modulator is not convenient to integrate with electronic logic circuits. Moreover, the thick barrier reduces the overlap between optical field and effective absorption area in a waveguide configuration, as the electrons and holes are confined in the quantum wells.…”

Section: Introductionmentioning

confidence: 99%

“…The Γ point band structures and direct-band-gap absorption spectra are obtained by using an 8-band k·p model. [17][18][19] This method has been used to model intersubband transitions of hole-to-electron states 11,12 and hole-to-hole states 20 in Ge/SiGe quantum wells. The simulation results provide excellent agreement with experimental results but the methods and techniques of designing low bias voltage Ge/SiGe MQWs modulator at 1550 nm have rarely been discussed.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm

et al. 2017

View full text Add to dashboard Cite

We design and simulate a Ge/SiGe multiple quantum wells (MQWs) modulator based on quantum confined Stark effect (QCSE) that operates at 1550 nm. By introducing a thick well and thin barrier in multiple quantum wells structure, the compressive strain of the Ge well is reduced and the absorption edge is shifted to the longer wavelength. An 8-band k⋅p model is employed to calculate the eigenstates and absorption spectra, and influences of quantum well parameters on the absorption property is analyzed and discussed. The numerical simulation indicates that the bias voltage is remarkably reduced to 0.5 V with 1 V voltage swing for 10 wells, while still maintaining over 5 dB absorption contrast ratio. The proposed Ge/SiGe modulator can be a potential approach compatible with traditional complementary metal-oxide-semiconductor (CMOS) technology and adoptable for integration with electronic components.

show abstract

Section: A Hamiltonian Of the 8-band Modelmentioning

confidence: 99%

Section: A Analysis Of Major Parameters In a Ge/sige Quantum Wellmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm

et al. 2017

View full text Add to dashboard Cite

show abstract

Light-Emission from Ion-Implanted Group-IV Nanostructures

Brehm

2021

Topics in Applied Physics

View full text Add to dashboard Cite

Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of siliconbased microelectronics. However, the lack of practical and low-cost silicon-based monolithic light sources such as light-emitting diodes and, in particular, lasers is the main bottleneck for silicon photonics to become the key technology of the 21 st century. After briefly reviewing the state of the art regarding silicon-based light-emitters, we discuss the challenges and benefits of a highly flexible approach: The epitaxial incorporation of group-IV nanostructures into crystalline silicon. We argue that a paradigm change for group-IV quantum dots (QDs) can be achieved by the intentional incorporation of extended point defects inside the QDs upon low energy ion implantation. The superior light-emission properties from such defect-enhanced quantum dots (DEQDs), our present understanding of their structural formation and light-emission mechanisms will be discussed. We will show that useful electrically-driven devices, such as light-emitting diodes (LEDs) can be fabricated employing optically active DEQDmaterial. These LEDs exhibit exceptional temperature-stability of their light emission properties even up to 100°C, unprecedented for purely group-IV-based optoelectronic devices. Thereafter, we will assess the superior temperature stability of the structural properties of DEQDs upon thermal annealing, the scalability of the light-emission with the DEQD density and passivation schemes to further improve the optical properties. The chapter ends with a discussion of future research directions that will spark the development of this exciting field even further.

show abstract

Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

et al. 2015

View full text Add to dashboard Cite

Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of molecules. While gold has been used almost exclusively so far, recent research has focused on semiconductors with the potential to revolutionize plasmonic devices. We fabricate antennas out of heavily doped Ge films epitaxially grown on Si wafers and demonstrate up to 2 orders of magnitude signal enhancement for the molecules located in the antenna hot spots compared to those located on a bare silicon substrate. Our results set a new path toward integration of plasmonic sensors with the ubiquitous CMOS platform.

show abstract

Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm

Cited by 27 publications

References 25 publications

Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm

Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm

Light-Emission from Ion-Implanted Group-IV Nanostructures

Midinfrared Plasmon-Enhanced Spectroscopy with Germanium Antennas on Silicon Substrates

Contact Info

Product

Resources

About