Ge–SiGe Quantum-Well Waveguide Photodetectors on Silicon for the Near-Infrared

Fidaner, Onur; Okyay, Ali Kemal; Roth, Jonathan E.; Schaevitz, Rebecca K.; Kuo, Yu‐Hsuan; Saraswat, Krishna C.; Harris, James S.; Miller, David A. B.

doi:10.1109/lpt.2007.904929

Cited by 60 publications

(37 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thin Ge quantum wells obtained on a Ge-on-Si platform (i) increase light absorption owing to strained lattice, (ii) provide tunability of device operation wavelength by changing the bi-layer thickness of each quantum well-andbarrier pair and (iii) increase modulation depth with quantum-confined Stark effect, which is stronger than Franz-Keldysch effect observed in bulk semiconductors [16,17]. Earlier, we have shown waveguide detectors employing SiGe multi-quantum-wells (MQWs) [4], however, such devices require typically 10V of bias and may suffer from large RC time constants related with the relatively large size of waveguide structures. In this work, we report the growth of very thin Ge-SiGe MQWs as well as fabrication and optoelectronic characterization of high performance p-i-n optical detectors on such layers.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Onaran¹,

Onbaşlı²,

Yeşilyurt³

et al. 2012

Opt. Express

Self Cite

View full text Add to dashboard Cite

Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm 2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. for optical communications," Appl. Phys. Lett. 81(4), 586-588 (2002 ©2012 Optical Society of America

show abstract

Section: Introductionmentioning

confidence: 99%

“…Recently, Nayfeh and associates developed multiple hydrogen annealing heteroepitaxy (MHAH) that enables low dislocation-density Ge growth on Si [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Onaran¹,

Onbaşlı²,

Yeşilyurt³

et al. 2012

Opt. Express

Self Cite

View full text Add to dashboard Cite

show abstract

“…The photoninduced current of an IR detector under illumination is given in Eq. (4): 15,18 i PH ¼ qλ hc…”

Section: Sensitivitymentioning

confidence: 99%

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

Venter

Sinha

2013

Opt. Eng

View full text Add to dashboard Cite

Abstract. Classically gated infrared (IR) detectors have been implemented using charge-coupled devices (CCD). Bipolar complementary metal-oxide semiconductor (BiCMOS) technology emerged as a viable alternative platform for development. BiCMOS technology has a number of advantages over CCD and conventional CMOS technology, of which increased switching speed is one. The pixel topology used in this work is a reversed-biased diode connected heterojunction bipolar transistor. The disadvantage of CMOS detectors is the increased readout noise due to the increased on-chip switching compared to CCD, which degrades dynamic range (DR) and sensitivity. This yields increased switching speeds compared to conventional bipolar junction transistors. Sensitivity improved from 50 mA∕W (peak) at 430 nm in CCD detectors to 180 mA∕W (peak) (or 180; 000 V∕W) at 665 nm in BiCMOS detectors. Other CMOS IR detectors previously published in the literature showed sensitivity values from 2750 to 5000 V∕W or 100 mA∕W. The DR also improved from 47 and 53 dB to 70 dB. The sensitivity of conventional CCD detectors previously published is around 53 mA∕W. The second advantage is that detection in the near-IR band with conventional silicon integrated technology is possible. This work has shown increased detection capabilities up to 1.1 μm compared to Si detectors.

show abstract

“…Bulk Silicon is not suitable for photodetection in the telecommunication bands, since it cannot absorb strongly in the near infrared owing to its wide bulk band gap HQHUJ\ a H9 )RU WRGD\ ¶V RSWRHOHFWURQLF GHYLFH DSSOLFDWLRQV *HUPDQLXP holds great promise with an absorption spectrum (E g(direct) = 0.8 eV, E g(indirect) = 0.66 eV) spanning the telecommunication wavelengths at which Si is transparent. By growing Ge on Si, it is also possible to integrate CMOS circuitry with optoelectronic components on single chip, which promises higher density and extended functionality [8].…”

mentioning

confidence: 99%

“…Ge growth on Si, however, is encumbered by the large lattice mismatch (4.2%) [6,7]. Nayfeh and coworkers recently introduced multiple hydrogen annealing heteroepitaxy (MHAH), technique achieving low defect density Ge layers on Si [8][9][10]. Here, we report the growth, optical and nanostructural characterization and device characterization of the MHAH-grown high quality thin Ge multi quantum well (MQW) films and the solar-cell characterization for devices made of these thin film MQW.…”

mentioning

confidence: 99%

Silicon-Germanium multi-quantum wells for extended functionality and lower cost integration

Onbaşlı

Yeşilyurt

et al. 2010

2010 IEEE Photinic Society's 23rd Annual Meeting

Self Cite

View full text Add to dashboard Cite

Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.Current state-of-the-art near infrared photodetectors are based on InGaAs [1], due to WKH PDWHULDO ¶V (i) ease of integration with InGaAsP lasers for optical communication systems [2], (ii) high degree of tunability of the direct band gap energy and absorption [3] and (iii) low dark current using lattice matched wide bandgap materials [4]. The mature Silicon CMOS technology provides a lower cost platform while optoelectronics offers high performance and increased functionality. By integrating the two, one can meet the stringent market conditions of performance and functionality. Despite its performance advantage, current III-V technology suffers from (i) significant high cost of integration with Si CMOS [5], (ii) and high raw material costs [6,7]. Bulk Silicon is not suitable for photodetection in the telecommunication bands, since it cannot absorb strongly in the near infrared owing to its wide bulk band gap HQHUJ\ a H9 )RU WRGD\ ¶V RSWRHOHFWURQLF GHYLFH DSSOLFDWLRQV *HUPDQLXP holds great promise with an absorption spectrum (E g(direct) = 0.8 eV, E g(indirect) = 0.66 eV) spanning the telecommunication wavelengths at which Si is transparent. By growing Ge on Si, it is also possible to integrate CMOS circuitry with optoelectronic components on single chip, which promises higher density and extended functionality [8].Integration of Ge-based optoelectronic devices with Silicon demands high quality Ge layer growth. Ge growth on Si, however, is encumbered by the large lattice mismatch (4.2%) [6,7]. Nayfeh and coworkers recently introduced multiple hydrogen annealing heteroepitaxy (MHAH), technique achieving low defect density Ge layers on Si [8][9][10]. Here, we report the growth, optical and nanostructural characterization and device characterization of the MHAH-grown high quality thin Ge multi quantum well (MQW) films and the solar-cell characterization for devices made of these thin film MQW. The layers are doped in-situ forming an n-i-p structure with 10 pairs of quantum wells. MQWs provide (i) the ability to tune the material absorption by changing the bilayer thickness of each quantum well-barrier for operation at different wavelengths and (ii) the ability to exploit the quantum confined Stark effect (QCSE) for electroabsorption modulation [11]. In these applications, it is essential to control the layer thicknesses and material quality with a high precision. MHAH technique provides high materials quality as well as thickness precision. MQWs are one-dimensional periodic structures which can be utilized in various optoelectronic devices like near-infrared photodetectors, electroabsorption modulators based on the QCSE (which yields larger absorption difference than Franz-Keldysh effect for bulk), Ge-on-Si lasers. The on-chip ...

show abstract

Ge–SiGe Quantum-Well Waveguide Photodetectors on Silicon for the Near-Infrared

Cited by 60 publications

References 13 publications

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Silicon-Germanium multi-quantum well photodetectors in the near infrared

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

Silicon-Germanium multi-quantum wells for extended functionality and lower cost integration

Contact Info

Product

Resources

About