2018
DOI: 10.1039/c8nr04399j
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Ge1−xSnx alloy quantum dots with composition-tunable energy gaps and near-infrared photoluminescence

Abstract: Colloidal synthesis and photophysical characterization of silicon-compatible Ge1−xSnx alloy quantum dots with composition-tunable near-infrared absorption and photoluminescence is reported.

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Cited by 63 publications
(63 citation statements)
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“…The crystalline size from an analysis of the X-ray peak widths using the Scherrer equation was found to be 8 ± 3 nm for BiOI and 12 ± 4 nm for BiOCl. [34,35]. The grain size is consistent with previous reports [36,37].…”
Section: Introductionsupporting
confidence: 92%
“…The crystalline size from an analysis of the X-ray peak widths using the Scherrer equation was found to be 8 ± 3 nm for BiOI and 12 ± 4 nm for BiOCl. [34,35]. The grain size is consistent with previous reports [36,37].…”
Section: Introductionsupporting
confidence: 92%
“…The films deposited at TA concentrations in the range of 0.5-0.6 and 0.7 M exhibited a sharp absorption edge in the absorption spectra, whereas at TA concentrations of 0.65 and 0.75 M, the films exhibited a nonlinear fall in the absorption edge, indicating the potential presence of the secondary phase of Sn 2 S 3 along with either the SnS or SnS 2 phase. The band gap of the prepared films was estimated from the Tauc plots ((αhν) 2 vs. hν) [43], as shown in Figure 6. The films deposited at concentrations of 0.6 and 0.7 M are observed to exhibit band gaps of 1.28 and 2.92 eV, respectively, corresponding to the energy gaps of the SnS and SnS 2 phases.…”
Section: Resultsmentioning
confidence: 99%
“…where 'E' shows photon energy, E g represents bandgap energy, d indicates thickness of the film and 'm' is transition constant (m equals 1/2 for direct and 2 for indirect transition) [35]. The direct permitted transition model is used to calculate the optical bandgap.…”
Section: Materials Characterizationmentioning
confidence: 99%