Two-dimensional
(2D) transition metal dichalcogenides have received
considerable attention due to their exotic electrical, chemical, and
physical properties. Here, we report a layer-dependent band structure
of a 2D semiconducting ternary metal chalcogenide (TMC), hexagonal
FeIn2S4 (hFIS), which is prepared through thickness-controlled
colloidal solution synthesis. The controlled dissociation rate of
chalcogen precursors caused the growth of the different thicknesses
of hFIS, which is coincident with mechanisms established in conventional
2D nanomaterial colloidal synthesis. The various thickness-dependent
band structures of hFIS were investigated from the corresponding optical
band gap and redox potentials. The unveiled layer-dependent band structure
of hFIS showed band gaps of approximately 1.02, 1.26, and 1.52 eV,
corresponding to synthesis of the 7–8, 5–6, and 2–3
layers, respectively. This study will contribute to the exploration
of other layer-dependent TMCs (MIn2X4, M = Fe,
Co, Mn, and Zn and X = S, Se, and Te) for new optical and electronic
device applications.