General model to predict and correct errors in phase map interpretation and measurement for out-of-plane ESPI interferometers

Soberanes, Héctor José Puga; Rodrı́guez-Vera, Ramón; Martı́nez, Amalia

doi:10.1016/s0030-3992(01)00099-8

Cited by 20 publications

(3 citation statements)

References 8 publications

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“…In ESPI, changes in the speckle pattern due to the movement of the object surface can be used within a double-exposure metrology approach to measure displacement [22]. The subtraction of speckle patterns recorded before and after the deformation of an object gives phase difference information, which, in turn, yields displacement information.…”

Section: Espimentioning

confidence: 99%

“…The superposition of these two beams' wavefronts forms a new speckle pattern by interference. The displacement of each individual speckle is determined by interferometry; this means comparing the amplitude of each speckle to the overall interference pattern [22].…”

Section: A Out-of-plane Espi Measurementsmentioning

confidence: 99%

“…First, the predeformation phase of each speckle, relative to the reference pattern, is determined. This is done through recording a series of phase-stepped images of the combined speckle pattern [22]. Between each image and the subsequent image in the series, a controlled phase step is added to the object beam.…”

Section: A Out-of-plane Espi Measurementsmentioning

confidence: 99%

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In Situ Measurement of Wire-Bond Strain in Electrically Active Power Semiconductors

Avery

Lorenz

2013

IEEE Trans. on Ind. Applicat.

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Thermal-mechanical displacement/strain in power semiconductor devices is investigated using electronic speckle pattern interferometry (ESPI). Validated models for thermalmechanical strain are key to improving the reliability of power electronics modules. ESPI is a noncontact optical technique capable of providing surface displacement measurements with submicrometer resolution. The significant contribution of this paper is an experimental methodology by which wire-bond displacement/ strain can be measured in an active device. Simultaneous in-plane and out-of-plane measurements are combined to accurately measure the displacement field across the wire-bond interface, while decoupling thermal-mechanical deformation not related to wire-bond strain (such as base plate thermal expansion). Experimental results verify the electrical-loss-driven thermalmechanical displacement/strain in an electrically active discrete insulated gate bipolar transistor switching at 5 kHz.

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Section: Espimentioning

confidence: 99%

Section: A Out-of-plane Espi Measurementsmentioning

confidence: 99%