Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth

Abé, Takao

doi:10.1016/j.jcrysgro.2011.04.017

Cited by 36 publications

(44 citation statements)

References 22 publications

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“…Several mechanisms to explain the observed impact of dopants have already been identified, i.e., (i) local strain (stress) related to dopant atom size , (ii) lattice strain (stress) related to dopant atom size , (iii) change of the Fermi level , and (iv) change of the V and I formation energies around dopant atoms (incorporation of V and I with dopant atoms from melt) . We verified these models in a previous study to explain the experimental results and concluded that the former three mechanisms (and their combinations) did not successfully explain the impact of n‐type doping .…”

Section: Impact Of Doping On the Voronkov Criterionsupporting

confidence: 67%

“…B and C doping made the crystal more I‐rich while O, P, As, and Sb doping made the crystal more V‐rich. N doping strongly suppressed V‐type point defect clusters despite the increased total concentration of V. Abe recently investigated heavily doped FZ‐Si and found that Sn and Sb doping leads to more V‐rich crystals while B and C doping leads to more I‐rich crystals. Vanhellemont et al reported that Ge doping at 1 × 10 20 Ge cm −3 of CZ‐Si has only a limited impact on V concentration.…”

Section: Impact Of Doping On the Voronkov Criterionmentioning

confidence: 99%

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Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

Sueoka

Kamiyama

Vanhellemont

et al. 2014

Physica Status Solidi (b)

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For the mass-production of 450 mm-diameter defect-free Si crystals, one has to take into account the impact of thermal stress on intrinsic point defect properties and behavior during single crystal growth from a melt. Very recently, first experimental evidence was published that the compressive thermal stress near the melt/solid interface makes a growing 300 mm diameter Czochralski Si crystal more vacancy-rich. In order to explain these experimental results quantitatively, the dependence of the formation enthalpies of the vacancy (V) and the self-interstitial (I) on compressive plane stress was determined using density functional theory (DFT) based calculations. It is found that compressive plane stress gives a higher stress dependence of the so-called "Voronkov criterion" compared to isotropic stress. The calculated plane stress dependence is in excellent agreement with the published experimental values and should be taken into account in the development of pulling processes for 450 mm diameter defect-free Si crystals. Also, the mechanisms behind the experimentally observed impact of the type and concentration of substitutional dopants on intrinsic point defect behavior and formation of grown-in defects are clarified. On the basis of the DFT calculated results, an appropriate model of intrinsic point defect behavior in heavily doped Si is proposed. (i) The incorporated total V and I concentrations at the melting point depend on the types and concentrations of dopants. (ii) Most of the total V and I concentrations contribute to Frenkel pair recombination during Si crystal growth at temperatures much higher than those to form grown-in intrinsic point defect clusters. The Voronkov model, while taking into account the present improvements, clearly explains all reported experimental results on grown-in defects for heavily doped Si. The most important remaining problems with respect to intrinsic point defect behavior and properties during single crystal growth from a melt are also discussed.

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Section: Impact Of Doping On the Voronkov Criterionsupporting

confidence: 67%

Section: Impact Of Doping On the Voronkov Criterionmentioning

confidence: 99%

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

Sueoka

Kamiyama

Vanhellemont

et al. 2014

Physica Status Solidi (b)

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“…Abe and Takahashi organize all their previous results around the crystal growth [6,7]. Along with many others, they established the experimental relationships between v and G s .…”

Section: Introductionmentioning

confidence: 94%

“…Recently, Abe and Takahashi have reported a strong correlation between the formation of A defects and G s by halting the crystal growth, from which they concluded that the formation of A defects is dominated by G s alone [6,7]. See Fig.…”

Section: Introductionmentioning

confidence: 99%

The effect of mass transfer on the temperature gradient of a crystal growing from melt

Shirai

Abé

2012

Journal of Crystal Growth

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“…[48,49] However, FZ-Si crystals, which are supplied on a commercial basis, are substantially void free as they are doped with nitrogen. [50] Figure 10 shows the change in defect states in a 150-mmdiameter CZ-Si crystal doped with nitrogen gas during crystal growth. Nitrogen gas was mixed in argon atmosphere at 400-mm position of the crystal's length during growth at a pulling rate of 0.7 mm min À1 .…”

Section: Nitrogen-doped Cz-si Crystalsmentioning

confidence: 99%

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Hourai

Nagashima

Nishikawa

et al. 2018

Physica Status Solidi (a)

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Development of point defect‐controlled Czochralski silicon (CZ‐Si) crystal growth technology by v/G control, i.e., the ratio of growth rate (v) to the axial temperature gradient (G) in the crystal near its melting point, is reviewed and nitrogen‐ and hydrogen‐doping technologies are proposed for 300‐mm magnetic‐field‐applied CZ‐Si (MCZ‐Si) crystals free of grown‐in defects with very low oxygen for application to future silicon power devices such as insulated gate bipolar transistors (IGBTs). Using a hot zone with a uniform G distribution in a crystal radial direction, v/G is maintained by controlling v of around the critical value at which the amount of vacancies is balanced with that of self‐interstitials so that the generation of grown‐in defects, such as voids and dislocation clusters, are suppressed. Nitrogen‐doping or hydrogen‐doping technology combined with v/G control also enables the enlarging of the process window for grown‐in defect‐free MCZ‐Si crystals that can be used as an alternative material to floating zone‐Si crystals. The advantages and disadvantages of both technologies are discussed from the view point of crystal quality required to guarantee higher performance of future IGBTs.

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Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth

Cited by 36 publications

References 22 publications

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

The effect of mass transfer on the temperature gradient of a crystal growing from melt

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

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