As-grown defects in 6-inch-diameter Czochralski-silicon crystals grown under different crystal growth rate conditions (0.4, 0.7, 1.1 mm/min) were studied by means of preferential etching and IR light-scattering tomography (LST). Grown-in defect images were classified into four types as follows: (a) flow patterns (wedge-shaped etch pits), (b) IR-defect images observed by LST, (c) ringlike distributed small pits, and (d) large pits. It was found by secondary ion mass spectrometry that IR defects are oxygen precipitates. Large pit defects were identified by transmission electron microscopy as large dislocation loops with a length of about 30 µm. At growth rates from 0.7 mm/min to 1.1 mm/min, flow pattern defects and IR defects coexist inside a ringlike distributed oxidation-induced stacking fault (ring-OSF) region. However, at growth rates less than 0.7 mm/min, large pit defects were observed in the region outside the ring. Characteristic ringlike distributed small pit defects were observed on the outer periphery of the ring region. Flow pattern defects were annihilated during annealing at 1100°C, while IR defects were stable at 1250°C.

Pancreatic cancer is frequently associated with intense growth of fibrous tissue at the periphery of tumours, but the histopathological quantification of this stromal reaction has not yet been used as a prognostic factor because of the difficulty of obtaining quantitative measures using manual methods. Manual histological grading is a poor indicator of outcome in this type of cancer and there is a clinical need to establish a more sensitive indicator. Recent pancreatic tumour biology research has focused upon the stromal reaction and there is an indication that its histopathological quantification may lead to a new prognostic indicator.Histological samples from 21 cases of pancreatic carcinoma were stained using the sirius red, light-green method. Multiple images from the centre and periphery of each tumour were automatically segmented using colour cluster analysis to subdivide each image into representative colours. These were classified manually as stroma, cell cytoplasm or lumen in order to measure the area of each component in each image. Measured areas were analysed to determine whether the technique could detect spatial differences in the area of each tissue component over all samples, and within individual samples.Over all 21 cases, the area of stromal tissue at the periphery of the tumours exceeded that at the centre by an average of 10.0 percentage points (P < 0.001). Within individual tumours, the algorithm was able to detect significantly more stroma (P < 0.05) at the periphery than the centre in 11 cases, whilst none of the remaining cases had significantly more stromal tissue at the centre than the periphery.The results demonstrate that semi-automated analysis can be used to detect spatial differences in the area of fibrous tissue in routinely stained sections of pancreatic cancer.

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The formation behavior of grown-in defects in Czochralski silicon (CZ-Si) crystals was investigated using two crystals that were quenched during growth but in one case after crystal growth had been halted for 5 h. The distributions of grown-in defect density and size, and their micro-structures were analyzed as a function of temperature during crystal growth just before quenching by means of an optical precipitate profiler (OPP) and an atomic force microscope (AFM) coupled with a laser particle counter. The formation of grown-in defects, which are considered to be octahedral voids, was found to consist of two dominant processes. The first step involves rapid void growth in a narrow temperature range of about 30° C below 1100° C and the subsequent step consists of an oxide film growth on the inner surface of the void during the cooling process to about 900° C after void formation. It was also found that the growth of the oxide film in the voids is rate-limited by the diffusion rate of oxygen atoms in silicon. In addition, it is strongly suggested that void formation in such a narrow temperature range is due to a rapid agglomeration of vacancies.

A solid-state phase transformation in octafluoronaphthalene has been discovered at 266.5 K on cooling, and at 15 K higher on heating. The symmetry of both phases is found to be the same, namely monoclinic with space group P2,/c. The unit cell parameters change by up to 10 x, but the integrity of a single crystal, which shatters on cooling, is good enough for a single-crystal structure determination. This has been done in both phases to a sufficient accuracy that a mechanism for the transformation can be proposed. Molecules which lie parallel to one another shear to a new parallel position, the shear movement being equal to one carbon-carbon bond of the naphthalene skeleton. In this process the molecules reorient. but are still related by the same \ j inmetry operations. This transformation, although not unique, is probably the first of its kind to be discovered in molecular systems.