Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals

Hourai, Masataka; Kajita, Eiji; Nagashima, Toru; Fujiwara, Haruhiko; Umeno, Shigeru; Sadamitsu, Shinsuke; Miki, Satoshi; Shigematsu, Takeshi

doi:10.4028/www.scientific.net/msf.196-201.1713

Cited by 39 publications

(31 citation statements)

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“…The parameter, V/G, was shown by Voronkov and Falster to be the deciding factor as to which of the two species survives and, hence, which type of defects develop in the growing crystals. When (V/G)(r) is greater than a critical number ͑1.34 ϫ 10 Ϫ3 cm 2 /min-K or 2.2 ϫ 10 Ϫ3 cm 2 /min-K͒, vacancy-rich material results, as described by von Ammon and Eric Dornberger 132 or Hourai 236 and their colleagues, respectively. When (V/G)(r) is less than the critical number, interstitial-rich material predominates.…”

Section: Point-defect Dilemmamentioning

confidence: 99%

“…When (V/G)(r) is less than the critical number, interstitial-rich material predominates. 132,236 Numerous discussions about the validity and relevance of the V/G parameter have been going on for more than a decade and Voronkov's approach is widely accepted. As most of the thermophysical properties cannot be directly measured, however, an extensive effort has been carried out to theoretically calculate V/G, including the detailed mechanism wherein the interstitial or vacancy are dominate as well as the formation of the OSF ring by Abe Brown, Talid Sinno, Ryuichi Habu, and their colleagues.…”

Section: Point-defect Dilemmamentioning

confidence: 99%

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An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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The emergence of crystalline silicon and silicon-based materials such as silicon-germanium as the premier materials and the personnel driving the integrated circuit ͑IC͒ microelectronics revolution will be reviewed. The major threshold events from the 1940s through the mid-1960s, presaging the onset of the large scale integration microelectronics era, will be highlighted. The major silicon material challenges such as dislocation-free single-crystal growth, plastic deformation, the point-defect dilemma, gettering, oxygen in silicon, carrier lifetime, and controlled point-defects in the silicon crystal during the evolution of silicon microelectronics from large scale integration through the very large scale integration era in the 1970s and the 1980s into the ultralarge scale integration era of the 1990s will then be reviewed. Opportunities in epitaxy, wafer cleaning, silicon-on-insulator, silicon-germanium, IC scaling and potential changes in device configuration and IC architecture in the evolution towards the 64 Gbit DRAM and 9 G transistor high-performance MPU logic era in 2016 ͑per the 2001 edition of the International Technology Roadmap for Semiconductors͒ will be discussed in the context of silicon-based microelectronics. The complementary role of compound semiconductors, nanoelectronics and the continuing initiative to obtain an optoelectronic system compatible with silicon will also be discussed. Finally, nonsilicon materials and device configurations will briefly be noted. © 2002 The Electrochemical Society. ͓DOI: 10.1149/1.1471893͔ All rights reserved.Available electronicallyApril 11, 2002. The computer and communications age has catapulted electronics to its current status as the dominant global industry. Indeed, we are in the midst of a revolution brought about by the availability of inexpensive information acquisition, manipulation, and distribution systems. Exploitation of electron and hole conduction in silicon has resulted in electronic memory and logic circuits such as the dynamic random access memory ͑DRAM͒ and microprocessor. Control of the interaction of photons with compound semiconductors has resulted in optical devices such as the laser and optical fiber networks. This revolution has been and will continue to be dependent on our ability to control electronic and photonic material processing techniques for the manufacture of useful devices, circuits and systems. The preparation and detailed processing sequence of a material from crystal growth through device and circuit fabrication determines the microstructure and, therefore, the electronic properties of the material and resulting device and circuit performance, yield, and reliability. Electronic materials include semiconductors, dielectrics, magnetics, piezoelectrics, optoelectronic materials, and optical fibers which may be utilized in crystalline, polycrystalline, or amorphous form. Materials are indeed the sine qua non of electronic and optical devices and circuits.An extensive list of relevant citations through 1997 is noted in Ref. ...

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Section: Point-defect Dilemmamentioning

confidence: 99%

Section: Point-defect Dilemmamentioning

confidence: 99%

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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“…Thus, both local and widespread nonuniformity often exists in the grown crystal. 9,10 To address this very important problem, we have proposed rapid thermal oxidation (RTO) at ultrahigh temperature (ultrahigh-temperature RTO).11 Our results obviously demonstrated that the oxygen precipitates generated during the crystal growth were dissipated entirely, and dense oxygen precipitate nuclei were formed uniformly in the radial direction during RTO at temperatures over 1350• C. We believed that the newly formed oxygen precipitates in the wafers that had been subjected to ultrahigh-temperature RTO were closely related to preserved vacancies. In particular, each oxygen precipitate nucleus is thought to consist of an oxygen-vacancy complex (for example, O 2 V).…”

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Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals II

Araki¹,

Maeda²,

Sudo³

et al. 2014

ECS Solid State Letters

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The suppression of oxygen precipitation in Czochralski silicon (Cz-Si) using the ultrahigh-temperature rapid thermal oxidation (ultrahigh-temperature RTO) technique was investigated by infrared (IR) tomography. The oxygen precipitate nuclei generated during crystal growth were completely dissolved, and the formation of new nuclei due to ultrahigh-temperature RTO was also restrained by controlled slowing of the cooling rate. The ultrahigh-temperature RTO technique is demonstrated to effectively control the oxygen precipitate nucleus formation to yield either uniformly distributed precipitates or completely suppressed precipitation. Our results indicate the flexible and precise control of oxygen precipitation nucleus using ultrahigh-temperature RTO technique is beneficial for device fabrication. Oxygen precipitates in Czochralski Silicon (Cz-Si) wafers effectively act as getter sites for heavy metal impurities in semiconductor devices, 1,2 and they also increase the mechanical strength of the wafer by precipitation hardening.3 Both these roles are important for stable device manufacturing, but oxygen precipitates are also responsible for decreasing the mechanical strength of the wafers if their size and density are not appropriately controlled. 4 In addition, when oxygen precipitates remain in the device formation region, they can result in failure due to current leakage. 5 For this reason, oxygen precipitation must sometimes be suppressed depending on the kind, structure, and process conditions of a semiconductor device. In particular, because of current advances in device structures such as scaling and threedimensional chip integration, precise control of oxygen precipitation will become more significant as the stress induced in Si wafers during device fabrication becomes increasingly crucial.6-8 Therefore, an effective method that can be used for either promoting or suppressing oxygen precipitation in Cz-Si crystals is needed.Many studies have been performed on methods for achieving such precise control of oxygen precipitation. However, maintaining the stability of the growing crystal both in the pulling and radial directions still remains difficult. Thus, both local and widespread nonuniformity often exists in the grown crystal. 9,10 To address this very important problem, we have proposed rapid thermal oxidation (RTO) at ultrahigh temperature (ultrahigh-temperature RTO).11 Our results obviously demonstrated that the oxygen precipitates generated during the crystal growth were dissipated entirely, and dense oxygen precipitate nuclei were formed uniformly in the radial direction during RTO at temperatures over 1350• C. We believed that the newly formed oxygen precipitates in the wafers that had been subjected to ultrahigh-temperature RTO were closely related to preserved vacancies. In particular, each oxygen precipitate nucleus is thought to consist of an oxygen-vacancy complex (for example, O 2 V). 12Ultrahigh-temperature annealing using rapid thermal processing (RTP) has great advantages in terms of uniformit...

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Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Hourai

Nagashima

Nishikawa

et al. 2018

Physica Status Solidi (a)

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Development of point defect‐controlled Czochralski silicon (CZ‐Si) crystal growth technology by v/G control, i.e., the ratio of growth rate (v) to the axial temperature gradient (G) in the crystal near its melting point, is reviewed and nitrogen‐ and hydrogen‐doping technologies are proposed for 300‐mm magnetic‐field‐applied CZ‐Si (MCZ‐Si) crystals free of grown‐in defects with very low oxygen for application to future silicon power devices such as insulated gate bipolar transistors (IGBTs). Using a hot zone with a uniform G distribution in a crystal radial direction, v/G is maintained by controlling v of around the critical value at which the amount of vacancies is balanced with that of self‐interstitials so that the generation of grown‐in defects, such as voids and dislocation clusters, are suppressed. Nitrogen‐doping or hydrogen‐doping technology combined with v/G control also enables the enlarging of the process window for grown‐in defect‐free MCZ‐Si crystals that can be used as an alternative material to floating zone‐Si crystals. The advantages and disadvantages of both technologies are discussed from the view point of crystal quality required to guarantee higher performance of future IGBTs.

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Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals

Cited by 39 publications

References 0 publications

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals II

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

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