Generation and Complete Electric-Field Characterization of Intense Ultrashort Tunable Far-Infrared Laser Pulses

Knippels, G.M.H.; Yan, Xiao‐Qing; MacLeod, A. M.; Gillespie, W. A.; Yasumoto, M.; Oepts, D.; Meer, A. F. G. van der

doi:10.1103/physrevlett.83.1578

Cited by 92 publications

(57 citation statements)

References 15 publications

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“…On successive round-trips, the shortened cavity length shifts the free-electron gain medium to the rear edge of the IR pulse that is amplified, while the front end experiences resonator loss. These cavity-dependent pulse-profile results are in qualitative agreement with observations at other IR FEL oscillators with normal- [34] and superconducting linacs [32].…”

Section: Fel Pulse Profilesupporting

confidence: 79%

Femtosecond single-shot timing and direct observation of subpulse formation in an infrared free-electron laser

Kiessling

Colson

Gewinner

et al. 2018

Phys. Rev. Accel. Beams

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We experimentally demonstrate a single-shot arrival time monitor for short picosecond infrared freeelectron laser (IR FEL) pulses based on balanced optical cross-correlation with a synchronized fs table-top laser. Employing this timing tool at the Fritz Haber Institute IR FEL, we observe a shot-to-shot timing jitter of only 100 fs and minute-scale timing drifts of a few picoseconds, the latter being strictly correlated with the electron beam energy of the accelerator. We acquire sum-frequency cross-correlation data with micropulse resolution, providing full access to the IR FEL pulse shape evolution within the macropulse. These measurements provide unprecedented insights into the occurrence of limit-cycle oscillations of the FEL intensity as a consequence of subpulse formation. Our experimental results are complemented by fourdimensional simulations of the nonlinear pulse dynamics in a low-gain FEL oscillator based on MaxwellLorentz theory.

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Section: Fel Pulse Profilesupporting

confidence: 79%

Femtosecond single-shot timing and direct observation of subpulse formation in an infrared free-electron laser

Kiessling

Colson

Gewinner

et al. 2018

Phys. Rev. Accel. Beams

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“…A series of measurements is carried out by making use of the frequency tunability and short pulse duration of the free electron laser "FELIX" at FOM-Rijnhuizen in the Netherlands operated in the spectral range between 70 and 120 m. 15 The output pulses of light from the FELIX were chosen to be Ϸ6 ps long, separated by 40 ns in a train ͑or "macropulse"͒ of 7 s duration. The macropulses had a repetition rate of 5 Hz.…”

Section: Samples and Experimental Methodsmentioning

confidence: 99%

Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures

et al. 2008

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“…The THz region has many applications i.e, imaging, security, information-communication [1,2]. Most recent advances have been achieved by employing free electron lasers (FELs) to generate THz radiation [3]. FELs can generate pulse energies of the order of J and operate over a wide frequency range.…”

Section: Introductionmentioning

confidence: 99%

Frequency upshift via flash ionization phenomena using semiconductor plasma

Nishida

Nakata

Oba

et al. 2013

EPJ Web of Conferences

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Abstract.We have demonstrated frequency upshift in the terahertz region by flash ionization. The magnitude of upshift frequency is tuned by the laser intensity. A proof of principle experiment has been performed with a plasma creation time scale much shorter than the period of the electromagnetic wave and a plasma length longer than its wavelength. Frequency upshifted from 0.35 to 3.5 THz by irradiating a ZnSe crystal with a ultra-short laser pulse has been observed.

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Generation and Complete Electric-Field Characterization of Intense Ultrashort Tunable Far-Infrared Laser Pulses

Cited by 92 publications

References 15 publications

Femtosecond single-shot timing and direct observation of subpulse formation in an infrared free-electron laser

Femtosecond single-shot timing and direct observation of subpulse formation in an infrared free-electron laser

Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures

Frequency upshift via flash ionization phenomena using semiconductor plasma

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