Generation and Control of Ultrafast Circular Photon Drag Current in Multilayer PtSe<sub>2</sub> Revealed Via Terahertz Emission

Zhang, Longhui; Zhang, Dongwen; Hu, Fangrong; Xu, Xinlong; Zhao, Qiyi; Sun, Xu; Wu, Haizhong; Lü, Zhihui; Wang, Xiaowei; Zhao, Zengxiu

doi:10.1002/adom.202201881

Cited by 11 publications

(6 citation statements)

References 52 publications

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“…They claimed that, as the proposed technique could be efficient to determine the carrier transport as well as efficient to investigate photon drag current in telecommunication devices. [186] A report demonstrates the ultra-thin flakes of Pt-TMDC-based electronic imprints for next-generation wearable electronics. In this contribution, large-scale synthesis of PtSe 2 and PtTe 2 is achieved through CVD at low temperatures (400 °C).…”

Section: Miscellaneous Applicationsmentioning

confidence: 99%

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Ahmad

Zhuang

et al. 2023

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indium gallium arsenide (InGaAs), mercury cadmium telluride (HgCdTe), gallium antimonide (GaSb), and indium arsenide (InAs), exhibit higher detectivity (D*), making them useful for infrared (IR) optical devices with a spectral range of up to 15 000 nm and D* as high as ≈10 14 Jones. However, employing these conventional photodetectors in commercial applications is challenging due to several factors, including narrow bandgap, complex and expensive fabrication process, and low-temperature operation mode. [2] Usually, conventional bulk semiconductor materials, even in the form of thin films, cannot be tempered. Using these materials to develop transparent, flexible, and bendable devices is challenging. Si possesses an indirect energy bandgap (1.12 eV) that is suitable for visible to nearinfrared (NIR) spectrum but is significantly limited beyond the NIR spectrum. Therefore, there is an increased need for novel materials that can overcome the limitations of bulk Si for broadband photodetection and can be suitable for developing advanced electronic and optoelectronic devices at low cost. Compared with conventional materials-based photodetectors, 2D materialsbased photo detectors are very sensitive to broadband spectrum owing to their tunable bandgap, which varies from 0 to 3 eV, as shown in Figure 1. [3] 2D materials-based photodetectors show a broad spectrum and excellent stability and thus can operate at room temperature. [4] 2D materials-based photodetectors not only show broaden spectrum but also show excellent stability and thus can operate at room temperature. [1b,5] The discovery of 2D transition metal dichalcogenides (TMDCs) materials has invoked great research interests in nanoelectronic and optoelectronic devices owing to their fascinating electronic and optoelectronic properties. In 2004, A. K. Geim and K. Novoselov assembled the graphene in the laboratory by mechanical exfoliation at room temperature. [6] According to the crystalline structure, 2D TMDCs layered materials can be divided into different prismatic phases such as hexagonal, octahedral, and tetragonal. In 2D TMDCs, each unit (MX2) is composed of a transition metal (M) layer sandwiched between two chalcogens (X) atomic layers. [3e,7] The 2D TMDCs materials family is a continuously emerging class of material systems with more than 150 different types of layered materials that can easily be exfoliated from the bulk crystals and possess distinctive features. [8] For instance, graphene with zero bandgap shows linear depression near the Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband...

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Section: Miscellaneous Applicationsmentioning

confidence: 99%

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Ahmad

Zhuang

et al. 2023

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“…In this regard, polarized terahertz (THz) emission spectroscopy based on ultrafast femtosecond lasers is a powerful optical tool for generating and detecting ultrafast spin photocurrents 24 , 25 . Very recently, THz emission has been observed in centrosymmetric Dirac semimetal PtSe 2 films due to the photon drag effect 26 , 27 and a second nonlinearity from a structural asymmetry 28 . Remarkably, Luo et al 5 observed the light-induced transient phase transition and hence giant photocurrent (i.e., THz emission) in bulk Dirac semimetal ZrTe 5 .…”

Section: Introductionmentioning

confidence: 99%

Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films

Chen,

Qiu,

Cheng

et al. 2024

Nat Commun

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Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, achieving a nonlinear optical response in centrosymmetric Dirac semimetals via defect engineering has remained a challenge. Here, we observe the helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films via the circular photogalvanic effect under normal incidence. This is activated by a controllable out-of-plane Te-vacancy defect gradient, which we unambiguously evidence with electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting but also generates the giant Berry curvature dipole responsible for the circular photogalvanic effect. We demonstrate that the THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, the temperature evolution of the THz emission features a minimum in the THz amplitude due to carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport.

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“…Prior investigations of the nonlinear properties of

{PtSe}_{2}

have been restricted to

{PtSe}_{2}

as a saturable absorber with no demonstrations on the layer dependent nonlinearities 28 . Very recent studies have investigated THz photocurrents in

{PtSe}_{2}

but were limited to a single thickness of 2.4 nm 29 or 50 nm, 30 limiting the understanding of the effect of the bandstructure. Further, these studies have assumed an entirely centrosymmetric nature and neglected the effect of the substrate.…”

Section: Introductionmentioning

confidence: 99%

Layer‐controlled nonlinear terahertz valleytronics in two‐dimensional semimetal and semiconductor PtSe₂

Hemmat,

Ayari,

Mičica

et al. 2023

InfoMat

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Platinum diselenide () is a promising two‐dimensional (2D) material for the terahertz (THz) range as, unlike other transition metal dichalcogenides (TMDs), its bandgap can be uniquely tuned from a semiconductor in the near‐infrared to a semimetal with the number of atomic layers. This gives the material unique THz photonic properties that can be layer‐engineered. Here, we demonstrate that a controlled THz nonlinearity—tuned from monolayer to bulk —can be realized in wafer size polycrystalline through the generation of ultrafast photocurrents and the engineering of the bandstructure valleys. This is combined with the layer interaction with the substrate for a broken material centrosymmetry, permitting a second order nonlinearity. Further, we show layer dependent circular dichroism, where the sign of the ultrafast currents and hence the phase of the emitted THz pulse can be controlled through the excitation of different bandstructure valleys. In particular, we show that a semimetal has a strong dichroism that is absent in the monolayer and few layer semiconducting limit. The microscopic origins of this TMD bandstructure engineering are highlighted through detailed DFT simulations, and shows the circular dichroism can be controlled when becomes a semimetal and when the K‐valleys can be excited. As well as showing that is a promising material for THz generation through layer controlled optical nonlinearities, this work opens up a new class of circular dichroism materials beyond the monolayer limit that has been the case of traditional TMDs, and impacting a range of domains from THz valleytronics, THz spintronics to harmonic generation.image

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Generation and Control of Ultrafast Circular Photon Drag Current in Multilayer PtSe₂ Revealed Via Terahertz Emission

Cited by 11 publications

References 52 publications

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films

Layer‐controlled nonlinear terahertz valleytronics in two‐dimensional semimetal and semiconductor PtSe₂

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Generation and Control of Ultrafast Circular Photon Drag Current in Multilayer PtSe2 Revealed Via Terahertz Emission

Cited by 11 publications

References 52 publications

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Research Process on Photodetectors based on Group‐10 Transition Metal Dichalcogenides

Defect-induced helicity dependent terahertz emission in Dirac semimetal PtTe2 thin films

Layer‐controlled nonlinear terahertz valleytronics in two‐dimensional semimetal and semiconductor PtSe2

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Generation and Control of Ultrafast Circular Photon Drag Current in Multilayer PtSe₂ Revealed Via Terahertz Emission

Layer‐controlled nonlinear terahertz valleytronics in two‐dimensional semimetal and semiconductor PtSe₂