Generation and Propagation of Defects During Crystal Growth

Klapper, H.

doi:10.1007/978-3-540-74761-1_4

Cited by 36 publications

(27 citation statements)

References 111 publications

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“…In this area, there is no remarkable dislocation. The horizontal line is the growth sector boundary, which is visible because of topographic contrast [22]. After the p − layer deposition, one dislocation appeared on this growth sector boundary, as shown in Fig.…”

Section: Resultsmentioning

confidence: 94%

X-Ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-Irradiated Precision Polished Substrate

Kato

Umezawa²,

Shikata³

2014

Acta Phys. Pol. A

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Suitable techniques for the growth of high-quality single-crystal diamond are needed in order to use single--crystal diamond in power devices. Because the ion plantation technique cannot be used for diamond doping, a drift layer and a conduction layer for a diamond power device were grown by chemical vapor deposition. An important challenge in this eld is to reduce the dislocation density in the epitaxial layer. The dislocation density was found to increase during the chemical vapor deposition process. Because a defective surface is one cause of increased dislocation density, the use of a UV-polished substrate having no scratches due to mechanical polishing was investigated.

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Section: Resultsmentioning

confidence: 94%

X-Ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-Irradiated Precision Polished Substrate

Kato

Umezawa²,

Shikata³

2014

Acta Phys. Pol. A

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“…They exhibit the typical geometry observed in crystals grown under stress-free conditions on planar surfaces [28,29]. They are straight-lined with directions depending on their Burgers vector and the growth face to which they are connected.…”

Section: Dislocationsmentioning

confidence: 98%

“…When crossing over an edge to a neighboured growth face, they are bent into a new direction typical for the new growth direction. A comprehensive treatment of these preferred directions of minimum energy is presented in [28,29].…”

Section: Dislocationsmentioning

confidence: 99%

“…The best choice is a cut through the seed crystal parallel to the normals of the main growth faces. Since growth dislocations originating from the seed crystal usually propagate more or less perpendicular to the growth faces, they are imaged along their whole length or at least along a considerable part of it [28][29][30][31]. In addition, the orientation of the cut should allow the exposure of transmission topographs in at least two different X-ray reflections with large structure factor.…”

Section: X-ray Diffraction Topography and Sample Preparationmentioning

confidence: 99%

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X-ray topographic study of growth defects of trans-stilbene crystals grown from solutions

Klapper

Zaitseva

Carman

2015

Journal of Crystal Growth

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Cite this article as: Helmut Klapper, Natalia Zaitseva, Leslie Carman, X-ray topographic study of growth defects of trans-stilbene crystals grown from solutions, Journal of Crystal Growth, http://dx. AbstractSingle crystals of trans-stilbene, C 14 H 12, with properties suitable for high-energy neutron detection were grown from solution in anisole and toluene by the temperature reduction method with growth rates up to 6 mm/day. From these crystals, slices of appropriate orientation and thickness of 2 -4 mm were cut and studied by X-ray diffraction topography applying the Lang method using CuKα radiation. The topographs exhibit growth defects such as liquid inclusions, dislocations, striations, and faulty growth-sector boundaries. These defects occur in the same typical arrangements and geometries as is observed in all kinds of crystals grown on habit faces from solution. Besides growth dislocations originating from inclusions and propagating with the growth front, many plastic glide dislocations in the shape of loops or half-loops emitted from inclusions by stress relaxation are observed. The glide system underlying this plasticity is discussed.

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“…The growth temperature influence the size of AlN nuclei (Yazdi et al, 2006) and thus the crystal morphology (Sitar et al, 2004). The dislocations in the crystal can arise both during growth or after the growth in the course of the thermomechanical stress relaxation (Bogdanov et al, 2003;Klapper, 2010;Kochuguev et al, 2001;Zhmakin et al, 2000). The effect of substrate misorientation and buffer layers on growth modes and defects in AlN sublimed onto 6H-SiC substrates were studied in Refs.…”

Section: Sublimation Growth Of Aln Crystalsmentioning

confidence: 99%