Generation kinetics of boron-oxygen complexes in p-type compensated c-Si

Abstract

Kinetics characteristics of boron-oxygen complexes responsible for light-induced degradation in p-type compensated c-Si have been investigated. The generation of B-O complexes is well fitted by a fast-forming process and a slow-forming one. Activation energies of complexes generation during the fast-forming process are determined to be 0.29 and 0.24 eV in compensated and non-compensated c-Si, respectively, and those during the slow-forming process are the same, about 0.44 eV. Moreover, it is found that the pre-exponential factors of complexes generation in compensated c-Si is proportional to the square of the net doping concentration, which suggests that the latent centers should exist.