Impact of carbon co-doping on the performance of crystalline silicon solar cells

Wu, Yichao; Yuan, Shu; Yu, Xuegong; Qiu, Xiaodong; Zhu, Haiyan; Qian, Jing Xia; Yang, Deren

doi:10.1016/j.solmat.2016.04.043

Cited by 7 publications

(3 citation statements)

References 32 publications

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“…Carbon is a unique element and expected to exhibit outstanding features when doped or functionalized into other materials such as light harvesting semiconductors. [104] Cardenas et al [91] prepared doped-Sb 2 S 3 thin films for the first time using carbon as a dopant. For C-doped Sb 2 S 3 , a carbon thin film was deposited on CBD-based Sb 2 S 3 film by arc vacuum evaporation using two graphite rods in contact.…”

Section: Dopingmentioning

confidence: 99%

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Doping Strategies in Sb₂S₃ Thin Films for Solar Cells

Myagmarsereejid

Ingram

Batmunkh

et al. 2021

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Sb2S3 is an attractive solar absorber material that has garnered tremendous interest because of its fascinating properties for solar cells including suitable band gap, high absorption coefficient, earth abundance, and excellent stability. Over the past several years, intensive efforts have been made to enhance the photovoltaic efficiencies of Sb2S3 solar cells using many promising approaches including interfacial engineering, surface passivation, additive engineering, and band‐gap engineering of the charge transport layers and active light absorbing Sb2S3 materials. Recently, doping strategies in Sb2S3 light absorbers have gained attention as they promise to play important roles in controlling band gap, regulating film morphology, and passivating grain boundaries, and thus resulting in enhanced carrier transport, which is one of the most challenging issues in this cutting‐edge research field. In this review, after a brief introduction to Sb2S3, an overview of Sb2S3 solar cells and their fundamental properties are provided. Recent advances in doping strategies in Sb2S3 thin films and solar cells are then discussed to provide in‐depth understanding of the effects of various dopants on the photovoltaic properties of Sb2S3 materials. In conclusion, the personal perspectives and outlook to the future development of Sb2S3 solar cells are provided.

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Section: Dopingmentioning

confidence: 99%

Section: Doping Strategiesmentioning

confidence: 99%

Doping Strategies in Sb₂S₃ Thin Films for Solar Cells

Myagmarsereejid

Ingram

Batmunkh

et al. 2021

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“…Notably, carbon affects oxygen precipitation [25,26] in Si. Also, carbon co-doping in doped Si suppresses the formation of boron-oxygen complexes, which is very important for the performance of crystalline Si solar cells [27].…”

Section: Introductionmentioning

confidence: 99%

Carbon-Isovalent Dopant Pairs in Silicon: A Density Functional Theory Study

Christopoulos,

Sgourou,

Chroneos

et al. 2024

Applied Sciences

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Carbon (C) is an important isovalent impurity in silicon (Si) that is inadvertently added in the lattice during growth. Germanium (Ge), tin (Sn), and lead (Pb) are isovalent atoms that are added in Si to improve its radiation hardness, which is important for microelectronics in space or radiation environments and near reactors or medical devices. In this work, we have employed density functional theory (DFT) calculations to study the structure and energetics of carbon substitutional-isovalent dopant substitutional CsDs (i.e., CsGes, CsSns and CsPbs) and carbon interstitial-isovalent dopant substitutional CiDs (i.e., CiGes, CiSns and CiPbs) defect pairs in Si. All these defect pairs are predicted to be bound with the larger isovalent atoms, forming stronger pairs with the carbon atoms. It is calculated that the larger the dopant, the more stable the defect pair, whereas the CsDs defects are more bound than the CiDs defects.

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