Generation of AgSi Film by Magnetron Sputtering for Use as Anodes in Lithium Ion Batteries

Abstract

In the present work we deposit Si film with 20%at. Ag, to improve the capacity retention and the cycleability of Si anode. The physical properties of the as-synthesized sample are investigated by thin film XRD and SEM. Charge-discharge properties, cyclic voltammetry, electrochemical impedance spectroscopy and cycle performance of the AgSi electrode are examined in detail when used as negative electrode versus lithium. The galvanostatic test result shows that the electrode delivers 1825 mAh g-1 initially with 95% Coulombic efficiency and retains 96% of its initial discharge capacity after 40 cycles. This outstanding coulombic efficiency of the electrode can be related to the presence of Ag, which decreases the polarization of anode.

Novel solvent-free direct coating process for battery electrodes and their electrochemical performance

“…To overcome these drawbacks, several approaches have been adopted to optimize the electrode by replacing the solvent and developing advanced binders such as solvent-soluble, water-soluble, and flexible functionalized binders [8][9][10][11]. These binders have resulted in some improvements and, hence renewed interest in the correlation between the particles and 3 polymer, since the binder has a significant effect on the performance of the electrode.…”

Nanocolumnar-Architectured, Layered Cu/Si Film as Anodes for Rechargeable LIB

“…Recently, different assumptions have been made to design Si electrodes [4][5][6]. One of them is using low dimensional structured Si (such as nanotubes, nanowires, nanocolumns, thin films) to decrease the tendency for crack initiation and propagation.…”

“…However, deciding the amount of Cu added into the Si film is a challenging task since Cu being electrically inactive versus Li decreases the initial discharge capacity of the anode. Thereby, some researchers have co-deposited limited amount of Cu with Si [6] or have changed the composition (the ratio of Cu/Si) along the film thickness to form graded nanostructures with low Cu content [23][24]. In this work to benefit from the advantageous of Cu while using it in a very limited amount, we deposit very thin (around 20nm) Cu layer on Si nanocolumn arrays by OAD method.…”