Generation of diamond nuclei by electric field in plasma chemical vapor deposition

Yugo, Shigemi; Kanai, Tomonori; Kimura, T.; Muto, Takashi

doi:10.1063/1.104415

Cited by 583 publications

(172 citation statements)

References 3 publications

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“…Another widely known method is the Bias Enhanced Nucleation (BEN) method [104] which employs an in situ surface bombardment under an applied negative bias on a conductive substrate. The applied electric field increases the ionization degree of the neutral gas molecules, the energy of the ions and the surface ion bombardment rate.…”

Section: Effect Of Substrate Pre-treatment On Diamond Nucleationmentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

256

156

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This paper reviews the growth of diamond by chemical vapour deposition (CVD). It includes the following seven parts: (1) Properties of diamond: this part briefly introduces the unique properties of diamond and their origin and lists some of the most common diamond applications. (2) Growth of diamond by CVD: this part reviews the history and the methods of growing CVD diamond. (3) Mechanisms of CVD diamond growth: this part discusses the current understanding on the growth of metastable diamond from the vapour phase. (4) Characterization of CVD diamond: we discuss the two most common techniques, Raman and XRD, which have been intensively employed for characterizing CVD diamond. (5) CVD diamond growth characteristics: this part demonstrates the characteristics of diamond nucleation and growth on various types of substrate materials. (6) Nanocrystalline diamond: in this section, we present an introduction to the growth mechanisms of nanocrystalline diamond and discuss their Raman features. This paper provides necessary information for those who are starting to work in the field of CVD diamond, as well as for those who need a relatively complete picture of the growth of CVD diamond.

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Section: Effect Of Substrate Pre-treatment On Diamond Nucleationmentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

256

156

View full text Add to dashboard Cite

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“…This approach, however, requires an appropriate substrate material and an efficient nucleation method. The latter is available since the bias enhanced nucleation (BEN) process has been introduced [5]. With iridium Ohtsuka et al [6] found a material which provides an ideal substrate for heteroepitaxial diamond deposition ten years ago.…”

Section: Introductionmentioning

confidence: 99%

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Gsell

Berner

Brugger

et al. 2008

Diamond and Related Materials

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Comparative electron diffraction study of the diamond nucleation layer on Ir (001) Gsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, BGsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, B (2008 Comparative electron diffraction study of the diamond nucleation layer on Ir(001) AbstractThe carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction (LEED) the carbon nucleation layer does not give any indication of crystalline diamond even if the presence of domains proves successful nucleation. In contrast, X-ray photoelectron diffraction (XPD) shows a clear C 1s pattern when domains are present after BEN. The anisotropy in the Ir XPD patterns is reduced after BEN while the fine structure is essentially identical compared to a single crystal Ir film. The change in the Ir XPD patterns after BEN can be explained by the carbon layer on top of a crystallographically unmodified Ir film. The loss and change in the fine structure of the C 1s patterns as compared to a single crystal diamond film are discussed in terms of mosaicity and a defective structure of the ordered fraction within the carbon layer.The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix. The carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction terms of mosaicity and a defective structure of the ordered fraction within the carbon layer. The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix.

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“…The Little Effect [1] is therefore different from the ElSayed Effect [22] (that photo-excited orbital states can couple strongly with electron spins to cause intersystem crossing nonadiabatically), but here on the basis of the Little Effect the dense phonons, rotons and magnons in the quantum fluids are determined to affect orbital dynamics adiabatically, via the lone electrons of complexation binding antibonding sp 2 orbitals of the graphitic carbon, causing spin interaction with the ring current within the graphitic structures for destabilizing and lowering the bond order of the graphitic structures. Such catalytic activated pi bond cleavage is consistent with electric charge activated diamond nucleation (biased enhanced nucleation) of Yugo [26]. Negatively charging and polarizing carbon atoms or carbanion formation [26] also facilitate the breakage of bosonic bonding of graphitic and carbyne precursors, just as the radicals serve the role of electrons in occupying antibonding orbitals for graphitic decomposition during biased enhanced nucleation BEN.…”

Section: The Resolution Of the Diamond Problemmentioning

confidence: 62%

Treatise on the Resolution of the diamond problem after 200 years

Little

Roache

2008

Progress in Solid State Chemistry

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Abstract:The problem of the physicochemical synthesis of diamond spans more than 200 years, involving many giants of science. Many technologies have been discovered, realized and used to resolve this diamond problem. Here the origin, definition and cause of the diamond problem are presented. The Resolution of the diamond problem is then discussed on the basis of the Little Effect, involving novel roton-phonon driven (antisymmetrical) multi-spin induced orbital orientation, subshell rehybridization and valence shell rotation of radical complexes in quantum fluids under magnetization across thermal, pressure, compositional, and spinor gradients in both space and time. Some experimental evidence of this magnetic quantum Resolution is briefly reviewed and integrated with this recent fruitful discovery. Furthermore, the implications of the Little Effect in comparison to the Woodward-Hoffman Rule are considered. The distinction of the Little Effect from the prior radical pair effect is clarified. The better compatibility of radicals, dangling bonds and magnetism with the diamond lattice relative to the graphitic lattice is discussed. Finally, these novel physicochemical phenomena for the Little Effect are compared with the natural diamond genesis. * corresponding author; email : redge_little@yahoo.com Keywords: diamond, high pressure, plasma deposition, catalytic properties, magnetic properties. Introduction -The Diamond Problem:A long history of giants of science has defined and contributed to the solution of the diamond problem. Section 2 considers the cause of the diamond problem. The list includes Newton, Boyle, Lavoisier, Guillton, Clouet, Karazin, Despretz, Hannay, Moisson, Roozeboom, Jessup, Rossini, Tammann, Parson, Einstein, Leipunski, Bridgman, Berman, Simon, Hershey, von Platen, Lundblad, Hall, Bundy, Strong, Wentorf, Cannon, Eversole, Deryagin, Angus, Fedoseev, Setaka, Matsumoto, Yugo, Linarres, Hemley, Sumiya, and Little. On the basis of these investigators, many technologies have been considered for resolving the diamond problem. These technologies include electric arcs; metal solvents; metal catalysts; electric ovens; electric resistive heaters; anvil vices and presses; electron beams; atomic beams; x-rays, alpha, and beta irradiators; exploding media; rapid lasing and liquid nitrogen quencher; chemical vapor deposition (CVD); hydrogenous plasma and microwave apparatuses; hot filaments; flames; and recently strong magnets. Some of these technologies have resulted in partial successes by the direct method, the indirect method and the H plasma metastable method of forming diamond. The complete Resolution here considers all three of these methods along with natural diamond formation and demonstrates complete Resolution by external magnetization (using external magnetization in conjunction with these three methods and considering intrinsic magnetism in mantle Kimberlite).On this basis, the synthesis and understanding of diamond have developed along side developments in chemistry, physics and engineering dur...

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Generation of diamond nuclei by electric field in plasma chemical vapor deposition

Cited by 583 publications

References 3 publications

Diamond growth by chemical vapour deposition

Diamond growth by chemical vapour deposition

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Treatise on the Resolution of the diamond problem after 200 years

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