Generation of oxygen interstitials with excess in situ Ga doping in chemical bath deposition process for the growth of p-type ZnO nanowires

Saha, Rajib; Saha, Nayan Ranjan; Karmakar, Anupam; Dalapati, Goutam Kumar; Chattopadhyay, Sanatan

doi:10.1007/s10854-019-01204-4

Cited by 26 publications

(12 citation statements)

References 37 publications

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“…[28] Therefore,w e propose the component at 531.3 eV can be assigned to the subsurface oxygen occupying at lattice defect and/or Cu vacancy sites (O Cu,vac ). Interstitial oxygen species,centered at around 533 eV,h as also been widely reported in ZnO system, [29] and the similarity of db and electronic structure of Zn and Cu (d 10 in both cases) rationalizes the analogous peak position of O int trapped in metallic Cu. TheO int atoms reside very close to the center between Cu atoms and can easily rotate around aCu-Cu bond, leading to astrain in the Cu lattice and ah igh binding energy position of due to its similarity to free oxygen atoms.T herefore,t he 533.2 eV component is assigned to interstitial oxygen in the reduced disordered metallic copper layer (O int ).…”

Section: Methodssupporting

confidence: 70%

Direct Evidence of Subsurface Oxygen Formation in Oxide‐Derived Cu by X‐ray Photoelectron Spectroscopy

et al. 2021

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Subsurface oxygen has been proposed to be crucial in oxide-derived copper (OD-Cu) electrocatalysts for enhancing the binding of CO intermediates during CO 2 reduction reaction (CO 2 RR). However,t he presence of such oxygen species under reductive conditions still remains debated. In this work, the existence of subsurface oxygen is validated by grazing incident hard X-rayphotoelectron spectroscopy, where OD-Cu was prepared by reduction of Cu oxide with H 2 without exposing to air.T he results suggest two types of subsurface oxygen embedded between the fully reduced metallic surface and the Cu 2 Ob uried beneath:( i) oxygen staying at lattice defects and/or vacancies in the surface-most region and (ii)interstitial oxygen intercalated in metal structure.T his study adds convincing support to the presence of subsurface oxygen in OD-Cu, whichpreviously has been suggested to play an important role to mitigate the s-repulsion of Cu for CO intermediates in CO 2 RR.

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Section: Methodssupporting

confidence: 70%

Direct Evidence of Subsurface Oxygen Formation in Oxide‐Derived Cu by X‐ray Photoelectron Spectroscopy

et al. 2021

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“…However, a plot of ln ½RðTÞ=Rð280 KÞ versus T À0. 25 , see inset in Figure 5a,b, reveals two regimes. The low-temperature behavior can be well described by a variable range hopping (VRH) transport mechanism proposed by Mott.…”

Section: Zero Magnetic Field Resultsmentioning

confidence: 94%

Magnetotransport Properties of Microstructured ZnO Thin Films Grown on a‐ and r‐Plane Sapphire Substrates

Barzola‐Quiquia¹,

Zelaya

Espíndola

et al. 2023

Physica Status Solidi (b)

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The transparent semiconductor ZnO has attracted substantial interest in the research community because of its potential applications as a transparent thin film, [1][2][3] transistor, [4][5][6] optoelectronic devices, [7][8][9] light-emitting diode, [10,11] among others. Another promising, non-inherent property is its roomtemperature ferromagnetism, which was first theoretically predicted to occur through doping with transition magnetic ions such as Fe, Co, or Ni. [12] However, many experimental studies revealed that the observed magnetic order is not related to the doping but certain defects. [13][14][15][16][17] A ferromagnetic ZnO, free of d-elements, opens new opportunities for applications in spintronics. The origin of the defect-induced magnetism (DIM) in defective ZnO samples is not always simple to explain, especially in samples where defects are introduced during the preparation of the samples, like Zn-or O-vacancies [15] or grain boundaries. [18] In these cases, the reproducibility of the magnetic order is low. Also, usual experimental techniques, such as SQUID (superconducting quantum interface device) magnetometry, cannot simply distinguish between defect-induced magnetic signals and those from other sources, like magnetic impurities on the samples or substrates. [19] However, recent theoretical and experimental studies using element-specific magnetic probes like X-ray magnetic circular dichroism (XMCD) in X-ray absorption spectroscopy [20] strongly suggest that Zn vacancies are the primary origin for the observed magnetic order in this compound. Oxygen vacancies, present in a more significant concentration than Zn vacancies, do not substantially contribute to the magnetic order due to their much smaller magnetic moment.Due to the low mass of thin films and weak magnetic signals (compared to the substrate), standard SQUID magnetometers are not the best choice for the magnetic characterization of ZnO thin films. Accounting for the influence of substrates by performing electrical transport measurements with an applied magnetic field is helpful. The measurement of the magnetoresistance (MR) and Hall effect (HE) [21] are powerful tools to explore the magnetic properties of conducting materials. In the case of MR, the sign of ferromagnetism is the opening of a butterfly-like hysteresis around zero field with extremes at fields corresponding to the coercive fields (H C ). When considering the HE, the appearance of an anomalous nonlinear contribution at low fields, in addition to the opening of a hysteresis with sign changes at fields corresponding to the coercive field, would be the case. We notice, however, that the field hysteresis depends on the coercive field of the investigated sample. Because H C is relatively weak in magnetic ZnO samples, that is, μ 0 Â H C ≤ 0.1 T, [15] high resolution is necessary to measure the hysteresis around zero field in the MR or HE. In general, with the field and temperature dependence of electrical-transport properties, it is possible to

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“…The results suggested the nucleation and growth process during the formation of GZO lms might be affected by oxygen, which reduced the island size in the coalescence stage. 24,25 By comparison, it has been observed that the grain size of ZnO:Mg lm decreased with the increasing oxygen partial pressure. 26 Additionally, the tetrahedral grains could be caused by abnormal grain growth.…”

Section: Resultsmentioning

confidence: 99%

The impact of oxygen on Ga doped ZnO film

Zhang

Zhao

et al. 2023

RSC Adv.

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Generation of oxygen interstitials with excess in situ Ga doping in chemical bath deposition process for the growth of p-type ZnO nanowires

Cited by 26 publications

References 37 publications

Direct Evidence of Subsurface Oxygen Formation in Oxide‐Derived Cu by X‐ray Photoelectron Spectroscopy

Direct Evidence of Subsurface Oxygen Formation in Oxide‐Derived Cu by X‐ray Photoelectron Spectroscopy

Magnetotransport Properties of Microstructured ZnO Thin Films Grown on a‐ and r‐Plane Sapphire Substrates

The impact of oxygen on Ga doped ZnO film

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