Generation of powerful microwave voltage oscillations in a diffused silicon diode

Lyubutin, S. K.; Rukin, S. N.; Slovikovsky, B.G.; Tsyranov, S. N.

doi:10.1134/s1063782613050151

Cited by 6 publications

(3 citation statements)

References 8 publications

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“…Such self-oscillations in Si-diode were previously observed in the paper [15]. The oscillation mechanism is associated with the generation of an electron-hole plasma packet in the region of a strong electric field near the p−n junction and the subsequent decrease in the field strength below the impact ionization threshold due to field distortion by this packet [15]. The period (t 0.5 ns) approximately corresponds to the duration of the drift extraction of carriers from the base region of the diode structure.…”

supporting

confidence: 70%

The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode

A.V.

M.S.

P.B.

2022

Technical Physics Letters

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It is experimentally established that high-voltage GaAs diodes maintain conducting state with low residual voltage after switching to the conducting state in the delayed impact-ionization mode. The duration of the constant current in the reversely-biased structure is determined by the duration of the applied rectangular voltage pulse (up to 100 ns) and significantly exceeds drift extraction and recombination times. The discovered effect of self-supporting conducting state resembles the "lock-on" effect in optically activated GaAs semiconductor switches and S-diodes with deep centers. The effect can be explained by shock ionization in narrow collapsing Gann domains. Keywords: high-voltage GaAs diodes, "lock-on" effect.

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supporting

confidence: 70%

The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode

A.V.

M.S.

P.B.

2022

Technical Physics Letters

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“…The peak power output of 1.2 kW at 1.9 GHz with 24% efficiency from five series-connected diodes was obtained in [3]. Very important results on powerful TRAPATT diodes were reported in [4] (300 kW at 6 GHz). The physical mechanism of the new avalanche diode operation mode was described in [5] by computer simulation.…”

Section: Introductionmentioning

confidence: 99%

Simulation of silicon n+np+, p+pn+ and Schottky TRAPATT diodes

Vyšniauskas¹,

Matukas²

2014

Lith. J. Phys.

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The plasma formation and extraction processes in silicon n + np + , p + pn + , and Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The drift-diffusion model was chosen for the simulation of the processes. We show that the minority carrier storage depends on the TRAPATT diode structure. The most intensive minority carrier storage takes place in the n + np + diode, where holes accumulate in the n + region and electrons in the p + region. The extraction of electrons from the p + region is more rapid due to higher electron mobility compared to holes. Thus, the initial current for the next oscillation period is the hole current. In the p + pn + diode the accumulation of holes in the n + region is inferior to that in the n + np + diode due to a higher electric field in the pn + interface. The initial current in p + pn + diodes is lower and the voltage oscillation is almost periodic. The most efficient structure in respect to low minority carrier storage is a pm-type Schottky diode. In this structure the initial conditions in all voltage oscillation periods are the same and there is a quite periodic oscillation in a very wide region of the diode total current density. We show that periodic oscillation can be achieved even in the n + np + diode with optical generation of the carriers during the plasma formation and extraction period.

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“…Peak power output of 1.2 kW at 1.9 GHz with 24% efficiency from five series-connected diodes has been obtained in [3]. Very important results on powerful TRAPATT diodes were reported in [4]. The physical mechanism of the new avalanche diode operation mode was described in [5] by computer simulation.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Si and GaAs submicron TRAPATT diodes

Vyšniauskas¹,

Matukas²

2014

Lith. J. Phys.

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Plasma formation and extraction processes in submicron silicon N + NP + , GaAs N + NP + , and GaAs NM Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The simulation of GaAs TRAPATT diodes was done for the first time. The quasi-hydrodynamic model was chosen for the simulation of the processes. The Synopsys TCAD Sentaurus Software Package was used. The carrier mobility dependence on phonon scattering, impurity scattering, carrier-carrier scattering, intervalley scattering (for GaAs), and mobility saturation in a high electric field was taken into account. Several generation-recombination mechanisms were included: impact ionization, Shockley-Read-Hall recombination (SRH) with doping-dependent lifetimes, trap-assisted tunnelling, band-to-band tunnelling, Auger recombination, and radiative recombination (for GaAs). We show that the so-called critical current density for plasma formation in the submicron diodes increases with the active layer thickness decrease and almost does not depend on the doping density in the active layer. The critical current density for silicon diodes is about two times lower than for the GaAs diodes. The intensive minority carrier storage in the N + and P + regions has a high influence on the voltage oscillation amplitude and frequency after the first plasma formation and extraction period. Oscillation damping takes place in the N + NP + GaAs diode with the active layer thickness of less than 0.3 µm.

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Generation of powerful microwave voltage oscillations in a diffused silicon diode

Cited by 6 publications

References 8 publications

The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode

The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode

Simulation of silicon n<sup>+</sup>np<sup>+</sup>, p<sup>+</sup>pn<sup>+</sup> and Schottky TRAPATT diodes

Simulation of Si and GaAs submicron TRAPATT diodes

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