Generation of pulses with sub-nanosecond duration and sub-joule energy in gain-switched Ti: Sapphire lasers

Tarasov, A A; Chu, Hong

doi:10.1364/oe.27.003574

Cited by 15 publications

(4 citation statements)

References 7 publications

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“…Considering the effect of temperature on the pulsed laser drive circuit [14], [15], [16], the emission re-frequency is set to be 3 kHz, the pulse width to be 20 ns, the amplitude to be 3.3 V, the power supply voltage to be 15V for the MOS tube driver chip, and the values of the storage capacitor, loop inductor, loop resistor, and stray capacitor in the circuit are set to be C1=1μF, L1=10nH, R1=0.5 Ω , C2=10nF, respectively. The RLC loop bias voltage is set to 15 V [17], [18], the temperature interval is set to be from -50°C to 50°C with a step of 10°C, and the results of the forward drive current and laser output power obtained by simulation are shown in Fig. 8 and Fig.…”

Section: Simulink Modelling Of Rlc Loop Equations and Rate Equationsmentioning

confidence: 99%

Research on Temperature Characteristics of Pulse Laser Fuze Drive Circuit

Liu,

Wang,

et al. 2024

IEEE Access

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The change in laser output power caused by the temperature change of the pulse laser fuze drive circuit directly affects the detection distance and accuracy. In order to achieve accurate distance determination of the pulse laser fuze, it is necessary to study the influence of temperature changes on the output characteristics of the pulse laser fuze drive circuit. In this paper, we study the changes in peak power caused by changes in component parameters such as resistors, capacitors, and laser diodes in the pulse laser drive circuit, which is caused by typical temperature gradients in the transient state. Based on Simulink software, a simulation model of pulsed laser drive circuit is built, and based on the theory of RLC loop equation and laser rate equation, the temperature-dependent gain coefficients are introduced to obtain the laser output characteristics corresponding to typical temperature. As a main result, we found that the laser output power decreases by about 10% during the temperature change from -50°C to 50°C. A hardware test platform is built to verify that the error is no more than 1%. The above study provides a reliable method for the design of the temperature model of the pulsed laser fuze drive circuit.INDEX TERMS Laser fuze, pulse laser drive circuit, temperature characteristics, circuit-level modeling.

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Section: Simulink Modelling Of Rlc Loop Equations and Rate Equationsmentioning

confidence: 99%

Research on Temperature Characteristics of Pulse Laser Fuze Drive Circuit

Liu,

Wang,

et al. 2024

IEEE Access

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“…Nevertheless, by gain-switching method, based on the quick modulation of the laser gain via the pump power, the nanosecond or even sub-nanosecond pulses can be efficiently extracted from the Ti:Sapphire laser. [7][8][9] Pulse duration of the Q-switched and gain-switched pulse is proportional to a cavity lifetime, i.e. the shorter the lifetime is, the shorter pulses can be generated.…”

Section: Introductionmentioning

confidence: 99%

Gain-switched Ti:Sapphire microchip laser investigation within 78-300 K temperature range

Fibrich

Šulc²,

Němec

et al. 2023

Solid State Lasers XXXII: Technology and Devices

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Influence of temperature on gain-switched Ti:Sapphire laser based on a microchip resonator geometry is investigated. Laser performances are described within 78-300 K temperature range. A frequency doubled radiation originating from the diode pumped Yb:YAG/Cr:YAG microchip crystal was used as a pump source, providing 2 ns pulses with a maximum energy of 113 µJ. The best output from the gain-switched Ti:Sapphire laser was achieved at cryogenic temperature -16 µJ of the output energy in 2 ns pulse at ∼746 nm wavelength. The corresponding slope efficiency related to incident pump energy was 16 %. Taking into account the upper estimation of the input energy absorbed in the crystal, the slope efficiency with respect to absorbed pump energy was determined to be 27 %.

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“…We investigated a gain-switched generation of subnanosecond pulses in short-cavity Ti:Sapphire lasers using pumping by nanosecond pulses. The original results were published in [17] and are considered in Section 2.2.…”

Section: Introductionmentioning

confidence: 99%

Engineering of Ti:Sapphire Lasers for Dermatology and Aesthetic Medicine

Tarasov¹,

Chu²

2021

Applied Sciences

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This review describes new engineering solutions for Ti:Sapphire lasers obtained at Laseroptek during the development of laser devices for dermatology and aesthetic medicine. The first device, PALLAS, produces 311 nm radiation by the third harmonic generation of a Ti:Sapphire laser, which possesses similar characteristics to excimer laser-based medical devices for skin treatments. In comparison to excimer lasers, Ti:Sapphire laser services are less expensive, which can save ~10% per year for customers compared to initial excimer laser costs. Here, the required characteristics were obtained due to the application of a new type of diffraction grating for spectral selection. The second device, HELIOS-4, based on the Ti:Sapphire laser, produces 300 mJ, 0.5 ns pulses at 785 nm for tattoo removal. The characteristics of HELIOS-4 exceed those of other tattoo removal laser devices represented in the medical market, despite a simple and inexpensive technical solution. The development of the last laser required the detailed study of a generation process and the investigation of the factors responsible for the synchronization of the generation in Ti:Sapphire lasers with short (several millimeters) cavities. The mechanism that can explain the synchronization in such lasers is suggested. Experiments for the confirmation of this concept are conducted and analyzed.

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Generation of pulses with sub-nanosecond duration and sub-joule energy in gain-switched Ti: Sapphire lasers

Cited by 15 publications

References 7 publications

Research on Temperature Characteristics of Pulse Laser Fuze Drive Circuit

Research on Temperature Characteristics of Pulse Laser Fuze Drive Circuit

Gain-switched Ti:Sapphire microchip laser investigation within 78-300 K temperature range

Engineering of Ti:Sapphire Lasers for Dermatology and Aesthetic Medicine

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