A cw Pr:YAlO(3) microchip-laser operation in the near-IR spectral region is reported. A microchip resonator was formed by dielectric mirrors directly deposited on the Pr:YAlO(3) crystal surfaces. For active medium pumping, a GaN laser diode providing up to 1W of output power at approximately 448 nm was used. 139mW of laser radiation at 747nm wavelength has been extracted from the microchip-laser system. Slope efficiency related to the incident pumping power was approximately 25%.
Use of a Tm:YAP laser (wavelength 1998 nm, power 1 W, irradiance 14 W/cm(2), interacting time 60 sec) which is at the same time compact and small enough to be used in the dental practice, together with moderate cooling, could be an efficient tool for debracketing.
Spectroscopic properties and laser output results of Pr-doped YAlO3 material under 1-W GaN-laser-diode pumping at various resonator arrangement (linear, V-folded, and microchip configuration) are reviewed and compared. Continuous output power of up to 140 mW in the near-infrared spectral range at 747 nm wavelength as well as 45% slope efficiency (with respect to absorbed pump power) and intracavity frequency doubling resulting in 12.3 mW blue emission is reported.
M2 NC LC
M1
M3
FResonator arrangement: F -focusing lens, M1 -pump mirror, M2 -output folded mirror, M3 -end mirror, LC -laser crystal, and NC -nonlinear crystal
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