Pr:YAlO_3 microchip laser

Fibrich, Martin; Jelı́nková, Helena; Šulc, Jan; Nejezchleb, Karel; Škoda, Václav

doi:10.1364/ol.35.002556

Cited by 26 publications

(22 citation statements)

References 8 publications

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“…Peak wavelength at 605.15nm [21]. Therefore, it was necessary to reshape the diode laser beam before focusing it onto the laser crystal and, by using the same pump system as above, the pump spot radii in the x and y directions inside the crystal were found equal to about 46 and 30 µm, respectively.…”

Section: Wavelength (Nm)mentioning

confidence: 99%

Red and orange laser operation of Pr:KYF_4 pumped by a Nd:YAG/LBO laser at 4691nm and a InGaN laser diode at 444nm

Xu¹,

Starecki²,

Pabœuf³

et al. 2013

Opt. Express

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This version is available at https://strathprints.strath.ac.uk/43072/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Abstract:We report the basic luminescence properties and the continuouswave (CW) laser operation of a Pr 3+ -doped KYF 4 single crystal in the Red and Orange spectral regions by using a new pumping scheme. The pump source is an especially developed, compact, slightly tunable and intra-cavity frequency-doubled diode-pumped Nd:YAG laser delivering a CW output power up to about 1.4 W around 469.1 nm. At this pump wavelength, red and orange laser emissions are obtained at about 642.3 and 605.5 nm, with maximum output powers of 11.3 and 1 mW and associated slope efficiencies of 9.3% and 3.4%, with respect to absorbed pump powers, respectively. For comparison, the Pr:KYF 4 crystal is also pumped by a InGaN blue laser diode operating around 444 nm. In this case, the same red and orange lasers are obtained, but with maximum output powers of 7.8 and 2 mW and the associated slope efficiencies of 7 and 5.8%, respectively. Wavelength tuning for the two lasers is demonstrated by slightly tilting the crystal. Orange laser operation and laser wavelength tuning are reported for the first time.

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Section: Wavelength (Nm)mentioning

confidence: 99%

Red and orange laser operation of Pr:KYF_4 pumped by a Nd:YAG/LBO laser at 4691nm and a InGaN laser diode at 444nm

Xu¹,

Starecki²,

Pabœuf³

et al. 2013

Opt. Express

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“…Laser output characteristics in single [28], folded (for wavelength tuning) [29], and microchip [30,31] resonator arrangement are summarized, as well as efficient frequency-doubling of fundamental wavelength resulting in the blue emission at 373.5 nm [32].…”

Section: An Attractive Laser Host For Prmentioning

confidence: 99%

“…As mentioned above, Pr:YAP active medium exhibits positive value of the temperature coefficient dn/dT enabling to design a microchip laser system, as opposed to Pr:YLF crystals. So, on the basis of our previous GaNdiode pumped Pr:YAP crystal investigation [28,29,32], the Pr:YAP microchip laser operating at 747 nm ( 3 P 0 → 3 F 4 laser transitions) has been designed and constructed. The microchip pump side (pump mirror) was highly transmitted for the incident diode radiation and highly reflective for the generated radiation.…”

Section: Microchip Configurationmentioning

confidence: 99%

Diode-pumped Pr:YAP lasers

et al. 2011

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Spectroscopic properties and laser output results of Pr-doped YAlO3 material under 1-W GaN-laser-diode pumping at various resonator arrangement (linear, V-folded, and microchip configuration) are reviewed and compared. Continuous output power of up to 140 mW in the near-infrared spectral range at 747 nm wavelength as well as 45% slope efficiency (with respect to absorbed pump power) and intracavity frequency doubling resulting in 12.3 mW blue emission is reported. M2 NC LC M1 M3 FResonator arrangement: F -focusing lens, M1 -pump mirror, M2 -output folded mirror, M3 -end mirror, LC -laser crystal, and NC -nonlinear crystal

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“…Subsequently, electro-optically Q-switched Pr:YAP laser action at 747 nm has been realized [11], as well as nearinfrared-to-blue conversion (747 nm → 373.5 nm) using the nonlinear BBO crystal [12,13]. Recently, the first microchip laser based on Pr-gain medium designed for 747 nm emission has been reported [14].…”

Section: An Attractive Laser Host For Prmentioning

confidence: 99%

Pr:YAlO3 microchip laser at 662 nm

et al. 2010

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A continuous‐wave Pr:YAlO3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO3 crystal front surfaces. GaN laser diode providing up to 1 W of output power at ∼448 nm was used as a pumping source. Output characteristics were investigated at different active medium temperature within the range of 11–35°C. The best result 27.4 mW of output power has been reached at 11°C at 680 mW of pumping power. The slope efficiency related to the incident pumping power was ∼9%. (© 2011 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA) (© 2011 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)

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Pr:YAlO_3 microchip laser

Cited by 26 publications

References 8 publications

Red and orange laser operation of Pr:KYF_4 pumped by a Nd:YAG/LBO laser at 4691nm and a InGaN laser diode at 444nm

Red and orange laser operation of Pr:KYF_4 pumped by a Nd:YAG/LBO laser at 4691nm and a InGaN laser diode at 444nm

Diode-pumped Pr:YAP lasers

Pr:YAlO3 microchip laser at 662 nm

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