Generation of Sub-100 ps Pulses at 532, 355, and 266 nm Using a SESAM Q-Switched Microchip Laser

We report a monolithic 1240 nm diamond Raman laser producing pulses with duration of 42-62 ps at 100 kHz repetition rate, and maximum average power of 246 mW. The Raman laser is formed by a 0.5-mm thick planar diamond, coated on both sides and pumped by ~100 ps pulses from a Q-switched 1064 nm laser. The maximum conversion efficiency from 1064 nm to 1240 nm was about 25%. The 1240 nm signal was frequency-doubled in single-pass configuration through a 10-mm long LBO crystal, enabling generation of pulses with a duration of 29-46 ps at 620 nm. The maximum average power at 620 nm was 128 mW, and the maximum conversion efficiency from 1240 nm to 620 nm was 50%. The Raman laser provides an efficient and flexible way to extend short pulse operation to wavelengths in spectral domains difficult to reach, such as 620 nm and in addition provides a simple pulse shortening mechanisms.

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“…The pulse energy was therefore about 10 µJ and the peak power >100 kW. The details of the pump setup are described in [17].…”

Section: Experimental and Resultsmentioning

confidence: 99%

Sub-50 ps pulses at 620 nm obtained from frequency doubled 1240 nm diamond Raman laser

2017

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“…Saturable absorbers (SA) have been used as a switching element to generate short pulses in passively Q-switched lasers. It is mainly represented by transition metal ions–doped bulk crystals like Cr 4+ :YAG and V 3+ :YAG [1,2,3,4,5], semiconductor materials like the Semiconductor Saturable Absorbing Mirror (SESAM) [6,7,8,9], and two-dimensional (2D) materials [10,11,12,13,14,15,16,17].…”

Section: Introductionmentioning

confidence: 99%

1.34 µm Q-Switched Nd:YVO4 Laser with a Reflective WS2 Saturable Absorber

Wang

et al. 2019

Nanomaterials

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In this work, a Tungsten disulfide (WS2) reflective saturable absorber (SA) fabricated using the Langmuir–Blodgett technique was used in a solid state Nd:YVO4 laser operating at 1.34 µm. A Q-switched laser was constructed. The shortest pulse width was 409 ns with the repetition rate of 159 kHz, and the maximum output power was 338 mW. To the best of our knowledge, it is the first time that short laser pulses have been generated in a solid state laser at 1.34 µm using a reflective WS2 SA fabricated by the Langmuir–Blodgett method.

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