A diode-pumped femtosecond mode-locked Nd,La:CaF 2 disordered crystal laser was reported for the first time. By appropriately choosing the Nd and La-doping concentration, stable mode-locked femtosecond laser pulses were obtained by using a semiconductor saturable absorber mirror (SESAM). The laser produced 633 fs pulses at the central wavelength of 1061 nm with an average output power of 200 mW at 82 MHz repetition rate.

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We have experimentally demonstrated and characterized the generation of tunable and ultra-broadband microwave frequency combs (MFCs) based on a slave laser (SL) subject to regular pulse injection from a current modulated master laser (ML). Under modulation frequency f m = 1.2 GHz and modulation power P m = 22 dBm, the current modulated ML is driven into a regular pulse state, and a seed MFC with 14.4 GHz bandwidth within a ±5 dB amplitude variation can be obtained. Such a seed MFC is then injected into the SL for producing final MFC with higher performances. For a fixed detuning frequency f i = 0 GHz and optimized injection power P i = 2060 µW, the bandwidth of the final MFC is increased to 33.6 GHz, and the single-sideband phase noises of all comb lines of the MFC within the bandwidth can be decreased to below-90.9 dBc/Hz@10 kHz. Additionally, the influences of P i and f m on the MFC bandwidth are also analyzed. The experimental results are in agreement with numerical simulations to a certain extent.

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In this paper the laser activities of a diode-pumped Yb:LuAG ceramic which was prepared by the solid-state reactive sintering method were reported. The maximum output power was 1.86 W in the continuous wave (CW) laser operation, corresponding to a slope efficiency of 53.6%. The CW laser could be tuned from 1030 to 1096 nm by inserting a prism in the cavity. With the assist of a semiconductor saturable absorber mirror (SESAM), passive mode-locking was realized, delivering sub-picosecond pulses with 933 fs duration and an average power of 532 mW at a repetition rate of 90.35 MHz.