Generation–recombination fluctuations in Mercury–Cadmium Telluride

Abstract

Measurements are described of noise in Hg1−xCdxTe for a composition of x = 0.2 corresponding to a band gap of 0.082 eV and a peak photoconductivity of 15 μm at liquid nitrogen temperature and above. Related results on Hall effect and resistivity are also presented. The noise is of a pure generation‐recombination type with a single relaxation time, which varies between 2 × 10−7 and 10−8s, depending on sample (composition), temperature and background radiation. The quantitative analysis is complicated by the Kane‐type conduction band, though with reasonable estimates for the effective masses and other structure parameters the agreement is satisfactory, i.e., within a factor of six. The lifetime is shown not be due to radiative direct transitions. For temperatures below 100 °K a Hall‐Shockley‐Read level of 0.05 eV above the valence band explains the lifetime most suitably whereas for larger T Auger recombination may play a role.

Zero bias terahertz and subterahertz detector operating at room temperature

“…The spectral density of generation-recombination noise current caused by interband transitions is of the form [8]:…”

Noise properties of linear defects in Hg1−xCdxTe

“…[2][3][4] Therefore, investigations are focused mainly on the determination of noise sources and other contributions to the whole noise of the final devices, such as long-wavelength infrared detectors. [2][3][4] Therefore, investigations are focused mainly on the determination of noise sources and other contributions to the whole noise of the final devices, such as long-wavelength infrared detectors.…”